STGW20H60DF

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STGW20H60DF is a high power semiconductor device categorized as a single IGBT (insulated gate bipolar transistor). This type of transistor offers higher electrical isolation between the collector and emitter channels compared to traditional bipolar transistors which makes them ideal for high current applications. The unique properties of these devices allow them to achieve higher power densities, faster switching speeds, and more reliable operation. It is suitable for applications where the high current density and high switching speed are important, including motor control, power converters, active filter circuits, and other power electronic applications.

STGW20H60DF belongs to a family of IGBTs which are designed specifically for higher power applications. The device is constructed using a combination of two complementary transistors with a common gate connection. At the heart of the device is an insulated gate FET and a bipolar power transistor that are connected in a four layer structure. This four layer structure provides the significant advantage of higher electrical isolation between the two transistors making them more resistant to EMI and voltage surges. The FET component handles the high frequency switching and protection, while the power transistor can handle the large currents.

The application field for STGW20H60DF is wide due to its extremely low on-state voltage drop (Vf) and low switching losses. This is especially useful in applications such as motor control, power converters, uninterruptible power supplies (UPS), and other high power applications. In addition, the device has excellent high-speed switching characteristics compared to other IGBTs, which allows it to be used in switching power supplies, AC motor control, AC inverter, and high frequency applications. It can also be used in high-speed switching circuits, pulse-width modulation (PWM) circuits, etc. These devices offer excellent dv/dt and di/dt protection, making them suited for applications with high-speed motor control, where higher currents and voltages than the rated values could potentially occur.

The working principle of STGW20H60DF is similar to that of other IGBTs. It is composed of two components, a FET and a power transistor. The FET component provides the low-voltage switching for the device, and the power transistor provides the high-current switching capability. Together, these components form the transistor “sandwich” from which the IGBT derives its properties. The devices are operated by controlling the FET component, which in turn activates or deactivates the power transistor. The FET component is driven by an external gate voltage, and when it is turned on, the power transistor is activated allowing current to flow from the collector to the emitter. When the gate voltage is reduced, the FET component is turned off, and the power transistor is disabled, preventing current from flowing.

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