STGWA40M120DF3

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	80A
Current - Collector Pulsed (Icm):	160A
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 40A
Power - Max:	468W
Switching Energy:	1.03mJ (on), 480µJ (off)
Input Type:	Standard
Gate Charge:	125nC
Td (on/off) @ 25°C:	35ns/140ns
Test Condition:	600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr):	355ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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Introduction

The STGWA40M120DF3 is a IGBT (Insulated Gate Bipolar Transistor) module designed for power applications. It is a single IGBT, meaning that it has a single gate and one source and one drain terminal. The module comes in a very compact package, allowing for easy and efficient installation in narrow spaces. The transistor offers low switching losses and excellent overload performance, making it ideal for high power applications.

Application Field

The STGWA40M120DF3 is a commonly used transistor in medium and high power applications. It is used in a variety of applications such as solar inverters, UPS systems, switch mode power supplies, electric vehicle charging, and other high power automotive systems. It is also used in AC and DC motor drives, air conditioners, uninterruptible power supplies (UPS) and industrial process automation. Its wide range of applications makes it a versatile device that serves many electronic and industrial needs.

Working Principle

The STGWA40M120DF3 is an insulated-gate bipolar transistor (IGBT) module. An IGBT is a type of power semiconductor that combines the best features of the MOSFET ( Metal−Oxide−Semiconductor Field−Effect Transistor) and the bipolar junction transistor (BJT). It has an insulated gate, bridging the gap between low−voltage MOSFETs circuits and higher−voltage BJT circuits. It is a voltage-controlled device, which means that its on/off state is controlled by the voltage on the gate terminal. When the gate voltage is between the on and off levels, the IGBT behaves like a BJT, meaning that the gate voltage will control the base current and the collector current. When the gate voltage is higher than the threshold voltage, it behaves like an MOSFET, and the gate current will control the drain current. This allows the device to operate at higher voltage levels and efficiently regulate the power transfer. The STGWA40M120DF3 offers a wide range of features designed to make it an excellent choice for high-power applications. It has an operating temperature range of -40 to +150 degrees Celsius, a maximum collector emitter voltage of 1200V, and a maximum current rating of 40A. It also has a low operating frequency, making it suitable for high-frequency applications.

Conclusion

The STGWA40M120DF3 is a single IGBT module that offers excellent performance in medium and high power applications. It combines the best features of the MOSFET and BJT and is capable of operating at higher voltage levels. It has an operating temperature range of -40 to +150 degrees Celsius and offers excellent overload performance. The low switching losses and low operating frequency make it an ideal choice for high power applications such as solar inverters, UPS systems, switch mode power supplies, electric vehicle charging, and other high power automotive systems.

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