STGW25S120DF3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A STGW25S120DF3 is a silicon-based IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring high-speed switching and low losses. It belongs to the single gate family within the IGBT family, which means the gate voltage is required for activation and deactivation of the transistor. This IGBT is capable of providing fast switching speeds and low switching losses in both directions, enabling it to be used in wide-ranging applications such as motor drives, battery chargers, aircraft inverters, and power systems.

STGW25S120DF3’s construction is mainly from a proven PN-Junction between two N-type layers. As a voltage is applied across the PN junction, the N-type layer develops an electronic field which creates a path of conduction between the P-type and N-type layers. The gate voltage then amplifies this electric field and allows a larger voltage to be applied across the PN junction to produce a bigger current.

The STGW25S120DF3 features a low collector-emitter saturation voltage (VCE(sat)) of 2.3V and a maximum DC collector current of 25A. It has a maximum DC collector-emitter voltage of 1200V and a maximum power dissipation of 150W. This IGBT also offers a turn-off switching time of 4µs, an avalanche energy of 67µJ, and a thermal resistance of 1.6°C/W. It works with a low gate threshold voltage of 4V and a maximum gate-emitter voltage of 20V.

Due to its combination of features, STGW25S120DF3 can be used in many power applications. It is particularly useful in motor drives, especially the smaller ones. This IGBT can also be utilized in switched-mode power supplies, resonant inverters, battery chargers, uninterruptible power supplies, solar inverters, and frequency converters. This IGBT is also ideal for power amplification in various consumer, automotive, and industrial applications.

STGW25S120DF3 is a reliable, single IGBT that is able to provide fast switching times with low switching losses for an array of applications. Its low VCE(sat) enables it to conduct high currents at fairly low voltage drops, making it an excellent choice for aggressive power applications. With its impressive performance and robust construction, this IGBT is undoubtedly a powerful and reliable option for power engineers.

The specific data is subject to PDF, and the above content is for reference