Allicdata Part #: | 497-15133-5-ND |
Manufacturer Part#: |
STGW30H60DFB |
Price: | $ 2.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 60A 260W TO247 |
More Detail: | IGBT Trench Field Stop 600V 60A 260W Through Hole ... |
DataSheet: | STGW30H60DFB Datasheet/PDF |
Quantity: | 476 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.31840 |
10 +: | $ 2.08467 |
100 +: | $ 1.70787 |
500 +: | $ 1.45388 |
1000 +: | $ 1.22616 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 60A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 30A |
Power - Max: | 260W |
Switching Energy: | 383µJ (on), 293µJ (off) |
Input Type: | Standard |
Gate Charge: | 149nC |
Td (on/off) @ 25°C: | 37ns/146ns |
Test Condition: | 400V, 30A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 53ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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An STGW30H60DFB transistor is a type of Insulated Gate Bipolar Transistor (IGBT). The IGBT is a combination of a bipolar junction transistor (BJT) and field effect transistor (FET). These components are combined to yield the optimal performance for switching applications. The STGW30H60DFB is part of the single type of IGBTs, which is commonly used for switch mode power supplies.
The primary application field for this type of transistor is motor control and switching. For motor control, a DC voltage is applied and the IGBT is used as a switch in order to control the DC current flow. In addition, the IGBT can be used as a switch in AC voltage applications as well.
The operating principle of the STGW30H60DFB transistor can be described as follows: when a positive current is applied to the base of the transistor, electrons in the substrate material become "Boosted" and move towards the collector of the transistor, providing current through the transistor. When the current is removed, the electrons are discharged and the transistor is "off".
The STGW30H60DFB transistor is a very efficient device for switch mode power supplies. It is designed for operation in high power conditions, such as motor control, and for switching applications in which fast switching operation is required. The high switching speed of this device, combined with its low on-resistance, make it an attractive option for power switching applications.
The STGW30H60DFB transistor is a very efficient and reliable device for switch mode power supplies and motor control applications. It is designed to operate at high frequencies and can switch large amounts of current quickly. The low on-resistance of the device makes it a great choice for a wide range of applications. Additionally, the design of the device ensures that it provides very reliable operation in high power conditions.
The specific data is subject to PDF, and the above content is for reference
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