STGWT30V60DF Discrete Semiconductor Products |
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Allicdata Part #: | 497-13770-5-ND |
Manufacturer Part#: |
STGWT30V60DF |
Price: | $ 2.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 60A 258W TO3P-3 |
More Detail: | IGBT Trench Field Stop 600V 60A 258W Through Hole ... |
DataSheet: | STGWT30V60DF Datasheet/PDF |
Quantity: | 466 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.34990 |
10 +: | $ 2.11302 |
100 +: | $ 1.73105 |
500 +: | $ 1.47363 |
1000 +: | $ 1.24283 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 60A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 30A |
Power - Max: | 258W |
Switching Energy: | 383µJ (on), 233µJ (off) |
Input Type: | Standard |
Gate Charge: | 163nC |
Td (on/off) @ 25°C: | 45ns/189ns |
Test Condition: | 400V, 30A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 53ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
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.The STGWT30V60DF is a type of IGBT (Insulated Gate Bipolar Transistor) and is classified as a Single IGBT module. It is made with a suitable substrate and field isolation thin film technology. It has a rugged design and uses free-wheeling diodes and gate resistors, both of which are integrated into the module.
The STGWT30V60DF is a 600V, 30A IGBT module that has a diode voltage rating of 600V, a diode current rating of 30A, and a gate-emitter voltage rating of ± 20V. The module has an insulation distance of 8mm, a junction temperature range of -40 to +125°C, and a maximum switching frequency of 33kHz. It is reverse voltage protected and has a high switching speed, with a dV/dt of 4500V/μs.
The STGWT30V60DF has various application fields, such as motor control, solar inverters, automotive, welding systems and UPS (uninterruptible power supply). Due to its robust and reliable design, it is suitable for a wide range of applications, particularly those which involve low-loss operation. It is also well-suited to high-power applications where high current, short switch-on time and fast recovery time are required, such as motor drives and welding systems.
The main function of the STGWT30V60DF is to convert electric power from a low- to a high-voltage level. It operates on the principle of controlling the current flow by applying a voltage drop across the terminal gate. When the gate voltage is below the breakdown voltage, the IGBT is off and does not allow any current to flow. When the voltage applied to the gate reaches the breakdown voltage, the IGBT will turn on and allow electric current to pass through it.
The STGWT30V60DF has an intrinsic body diode within the IGBT itself. This diode is in parallel with the conventional diode within the module and serves to limit transient voltage and current when the IGBT is switched off. This ensures that the electric current does not cause any damage or affect the performance of the device.
In summary, the STGWT30V60DF is a 600V, 30A IGBT module that has a wide variety of application fields, including motor control, solar inverters, automotive, welding systems, and UPS. It operates on the principle of controlling the current flow by applying a voltage drop across the terminal gate, and has an intrinsic body diode which limits transient voltage and current when the IGBT is switched off.
The specific data is subject to PDF, and the above content is for reference
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