Allicdata Part #: | 497-14058-5-ND |
Manufacturer Part#: |
STGW80V60DF |
Price: | $ 4.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 120A 469W TO247 |
More Detail: | IGBT Trench Field Stop 600V 120A 469W Through Hole... |
DataSheet: | STGW80V60DF Datasheet/PDF |
Quantity: | 29 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 4.49820 |
10 +: | $ 4.06350 |
100 +: | $ 3.36420 |
500 +: | $ 2.92950 |
1000 +: | $ 2.55150 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 120A |
Current - Collector Pulsed (Icm): | 240A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 80A |
Power - Max: | 469W |
Switching Energy: | 1.8mJ (on), 1mJ (off) |
Input Type: | Standard |
Gate Charge: | 448nC |
Td (on/off) @ 25°C: | 60ns/220ns |
Test Condition: | 400V, 80A, 5 Ohm, 15V |
Reverse Recovery Time (trr): | 60ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 Exposed Pad |
Supplier Device Package: | TO-247 |
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STGW80V60DF is a type of transistor which belongs to the group of insulated gate bipolar transistors, more commonly known as IGBTs. It is a single transistor and is widely used in power applications. This article will explain the application field and working principle of the STGW80V60DF transistor.
Application Field:
The STGW80V60DF transistor is primarily used in power applications, such as power-factor correction, motor control and high-power switching. It is especially useful in applications which require high current and voltage switching capabilities. It is also used in renewable energy systems, such as wind and solar power systems, because of its high efficiency level. It is also used in high-efficiency switching power supplies, high-speed switching, and in automotive applications such as electric vehicles and hybrid-electric vehicles.
Working Principle:
The STGW80V60DF transistor is comprised of two main components: an N-type semiconductor and a P-type semiconductor. When the transistor is turned on, the two components conjoin and form a diode-like structure, known as an N-channel MOSFET (metal-oxide-semiconductor field effect transistor). This structure allows for current flow between the two components. The voltage across the components determines the current flow, and this is known as the Gate voltage. When the Gate voltage is increased, the current flow is increased, and when the Gate voltage is decreased, the current flow is decreased. So, by controlling the Gate voltage, the current flow can be regulated.
The STGW80V60DF is designed to be as efficient, reliable, and cost-effective as possible. It is designed to operate at high temperatures and be resistant to breakdowns. Additionally, it is designed to be able to handle high current and voltages. This allows the STGW80V60DF transistor to be used in a variety of applications where power is needed.
In conclusion, the STGW80V60DF is a single transistor which belongs to the group of insulated gate bipolar transistors, more commonly known as IGBTs. It is primarily used in power applications, such as power-factor correction, motor control and high-power switching. It is also used in other applications, such as renewable energy systems and automotive applications. The STGW80V60DF works by controlling the current flow with a Gate voltage. It is designed to be as efficient, reliable, and cost-effective as possible, and it is able to handle high current and voltage switching capabilities.
The specific data is subject to PDF, and the above content is for reference
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