STGW80V60DF Allicdata Electronics
Allicdata Part #:

497-14058-5-ND

Manufacturer Part#:

STGW80V60DF

Price: $ 4.95
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 120A 469W TO247
More Detail: IGBT Trench Field Stop 600V 120A 469W Through Hole...
DataSheet: STGW80V60DF datasheetSTGW80V60DF Datasheet/PDF
Quantity: 29
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 4.49820
10 +: $ 4.06350
100 +: $ 3.36420
500 +: $ 2.92950
1000 +: $ 2.55150
Stock 29Can Ship Immediately
$ 4.95
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 120A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Power - Max: 469W
Switching Energy: 1.8mJ (on), 1mJ (off)
Input Type: Standard
Gate Charge: 448nC
Td (on/off) @ 25°C: 60ns/220ns
Test Condition: 400V, 80A, 5 Ohm, 15V
Reverse Recovery Time (trr): 60ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Exposed Pad
Supplier Device Package: TO-247
Description

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STGW80V60DF is a type of transistor which belongs to the group of insulated gate bipolar transistors, more commonly known as IGBTs. It is a single transistor and is widely used in power applications. This article will explain the application field and working principle of the STGW80V60DF transistor.

Application Field:

The STGW80V60DF transistor is primarily used in power applications, such as power-factor correction, motor control and high-power switching. It is especially useful in applications which require high current and voltage switching capabilities. It is also used in renewable energy systems, such as wind and solar power systems, because of its high efficiency level. It is also used in high-efficiency switching power supplies, high-speed switching, and in automotive applications such as electric vehicles and hybrid-electric vehicles.

Working Principle:

The STGW80V60DF transistor is comprised of two main components: an N-type semiconductor and a P-type semiconductor. When the transistor is turned on, the two components conjoin and form a diode-like structure, known as an N-channel MOSFET (metal-oxide-semiconductor field effect transistor). This structure allows for current flow between the two components. The voltage across the components determines the current flow, and this is known as the Gate voltage. When the Gate voltage is increased, the current flow is increased, and when the Gate voltage is decreased, the current flow is decreased. So, by controlling the Gate voltage, the current flow can be regulated.

The STGW80V60DF is designed to be as efficient, reliable, and cost-effective as possible. It is designed to operate at high temperatures and be resistant to breakdowns. Additionally, it is designed to be able to handle high current and voltages. This allows the STGW80V60DF transistor to be used in a variety of applications where power is needed.

In conclusion, the STGW80V60DF is a single transistor which belongs to the group of insulated gate bipolar transistors, more commonly known as IGBTs. It is primarily used in power applications, such as power-factor correction, motor control and high-power switching. It is also used in other applications, such as renewable energy systems and automotive applications. The STGW80V60DF works by controlling the current flow with a Gate voltage. It is designed to be as efficient, reliable, and cost-effective as possible, and it is able to handle high current and voltage switching capabilities.

The specific data is subject to PDF, and the above content is for reference

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