STGW30H65FB

Power - Max:	260W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C:	37ns/146ns
Gate Charge:	149nC
Input Type:	Standard
Switching Energy:	151µJ (on), 293µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 30A
Current - Collector Pulsed (Icm):	120A
Current - Collector (Ic) (Max):	30A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The STGW30H65FB is a N-channel, single-chip insulated gate bipolar transistors (IGBTs) represented by a two-terminal power switch. It is designed using advanced Trench IGBT technology and optimized to provide robust operation with fast switching times, low losses and low EMI noise. The STGW30H65FB is a 650V IGBT ideal for applications that require reliable operation and fast power switching up to 200 kHz.

Application Field

The STGW30H65FB is ideally suited for use in a wide range of applications, including:

• HV DC - DC converters
• Soft starters
• Electronic lighting
• Motor drives
• Industrial automation
• Uninterruptible power supplies

The STGW30H65FB is a robust and cost effective solution for applications such as high frequency converters, light dimmers, welders and appliances. It delivers superior performance and reliability due to its wide-body breakthrough technology, combined with uniform low losses and high frequency capability. This makes it perfect for use in high performance industrial, commercial and residential applications.

Working Principle

The STGW30H65FB is a key component of an IGBT converter. It features a built-in gate driver circuit with high- and low-impedance gate drive control inputs along with integrated protection features. Its Trench IGBT structure allows it to be operated with two gates: a high voltage gate voltage (VCE) and a low voltage gate voltage (VGE). Inward current conduction is achieved when a high voltage gate voltage (VCE) is applied to the gate and a low voltage gate voltage (VGE) is applied. The low voltage gate voltage (VGE) provides improved turn-on and turn-off speed at the expense of high energy losses. In order to reduce losses, the high voltage gate voltage (VCE) should be applied to minimize conduction losses.Another feature of the STGW30H65FB is its integrated over-current protection that is capable of detecting failures in the primary current loop. This allows the IGBT to be protected against over-currents in case of faults in the circuit. The device also has the ability to soft start to reduce the outputs inrush current and EMI noise during start up.

Conclusion

The STGW30H65FB is a single chip IGBT that is ideal for applications requiring fast switching, low losses and low EMI noise. It can be used in a wide range of applications ranging from HV DC - DC converters to uninterruptible power supplies. The built-in gate driver circuit and integrated protection features make it a reliable and cost-effective solution for many applications. In addition, its Trench IGBT structure allows it to be used with two gates: a high voltage gate voltage (VCE) and a low voltage gate voltage (VGE).

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description