| Allicdata Part #: | STI200N6F3-ND |
| Manufacturer Part#: |
STI200N6F3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 60V 120A I2PAK |
| More Detail: | N-Channel 60V 120A (Tc) 330W (Tc) Through Hole I2P... |
| DataSheet: |  STI200N6F3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | I2PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 330W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6265pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 101nC @ 10V |
| Series: | STripFET™ |
| Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 60A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The STI200N6F3 is a MOSFET transistor with a strong gate-source resistance that makes it ideal for high-power applications. It can handle up to 200 watts, while maintaining a low on-state resistance of 3.2 ohms. This makes it suitable for switching high power loads and other power devices.
The STI200N6F3 is designed to operate with a voltage of +5 volts and a ground return to -5 volts and can be used in both continous and pulsed applications. Its low gate-source resistance allows for high speed switching, enabling it to be used in high-frequency switching applications.
The STI200N6F3 is a common-source device, meaning that when the gate signal is high the MOSFET is in a low state, essentially breaking the circuit and allowing no current to pass through. When the gate signal is low the MOSFET is in a high state, essentially enabling the circuit and allowing current to flow.
The STI200N6F3 is typically used in a wide range of applications such as motor control, power converters, and current regulation. It can also be used in applications where a large amount of power needs to be switched quickly, such as Ultra High Frequency (UHF) antennas. Additionally, it has been used in high-performance amplifier designs to reduce distortion and improve sound quality.
The STI200N6F3 also has the ability to withstand high temperatures, making it ideal for use in automotive and industrial applications. It is constructed using an isolated case construction for additional protection against thermal, mechanical and electrical stresses.
In summary, the STI200N6F3 is a MOSFET transistor designed for high-power, high-frequency applications. It is suitable for switching high power loads and other power devices and has been used in a variety of applications, including motor control, power converters, and current regulation. It is also well-suited to withstanding harsh environments, making it a reliable choice for automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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