STI23NM60N Allicdata Electronics
Allicdata Part #:

STI23NM60N-ND

Manufacturer Part#:

STI23NM60N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 19A I2PAK
More Detail: N-Channel 600V 19A (Tc) 150W (Tc) Through Hole I2P...
DataSheet: STI23NM60N datasheetSTI23NM60N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 180 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STI23NM60N is a N-channel MOSFET transistor from STMicroelectronics. It belongs to the family of medium power range MOSFETs and is manufactured using the company\'s advanced VIPower process with a low threshhold voltage. The device is ideal for use in power conversion, energy management applications as it offers a low on-resistance R DS(on) characterised at 25°C and maximum drain current at 25°C of 19A.

In terms of its application field, the STI23NM60N can be used as a top-side switcher in power factor correction applications, as well as a level or voltage shifter in many automotive, audio, networking applications. Furthermore, it is also useful for synchronous rectification and other applications offering improved performance for the end user.

The working principle of the STI23NM60N is based on its advanced VIPower process and MOSFET technology. This basically means that the device uses N-channel MOSFETs in a basic depletion-mode configuration, which allows current to flow from drain to source when the gate voltage is greater than the source voltage. This means that the MOSFET acts as an amplifier, making it suitable for use in numerous commercial, residential and industrial applications.

The power supplies of the STI23NM60N offer an advantage over other MOSFETs due to their capabilities in fast switching speed and low conduction loss. Additionally, the device can provide ESD protection as it is used in conjunction with a bias current generator. The device also offers a high-avalanche capability, enabling low-resistance Rds values and high-output current. With its low gate charge, the STI23NM60N is able to provide a high gain and fast switching time.

In summary, the STI23NM60N is a medium power range MOSFET from STMicroelectronics that offers various advantages over other MOSFETs due to its advanced VIPower process and MOSFET technology. Its application field covers many different commercial, residential and industrial applications and its low threshhold voltage and low gate charge make it useful for faster switching applications.

The specific data is subject to PDF, and the above content is for reference

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