STI24N60M2 Allicdata Electronics
Allicdata Part #:

497-13775-5-ND

Manufacturer Part#:

STI24N60M2

Price: $ 2.80
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 18A I2PAK
More Detail: N-Channel 600V 18A (Tc) 150W (Tc) Through Hole I2P...
DataSheet: STI24N60M2 datasheetSTI24N60M2 Datasheet/PDF
Quantity: 132
1 +: $ 2.80000
10 +: $ 2.71600
100 +: $ 2.66000
1000 +: $ 2.60400
10000 +: $ 2.52000
Stock 132Can Ship Immediately
$ 2.8
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STI24N60M2 is an N-channel insulated-gate field effect transistor (IGFET) designed for powering different types of high-current applications. This type of transistor is used for power conversion and modulation, and can be applied in a variety of situations, including audio amplifiers and motor control systems. The STI24N60M2 is a relatively new type of transistor that has been designed to offer higher efficiency over traditional P-type field-effect transistors (PFET) and bipolar junction transistors (BJT). This type of transistor has higher current carrying capacity, allowing it to be used in more demanding applications.

The STI24N60M2 is a type of metal-oxide semiconductor field effect transistor (MOSFET) that utilizes the insulated-gate technology to achieve higher performance. This type of transistor operates independently from its control gate, which allows it to minimize the gate-source capacitance and resistive gate charge. This reduces the power loss associated with the transistor, which results in improved efficiency and performance.

The STI24N60M2 is a single-gate field-effect transistor, which consists of a metal-oxide gate, a source and a drain, and a metal-oxide substrate. The gate is the part of the transistor which is used to control the electron flow through the transistor. The gate and the metal-oxide substrate form a barrier between the source and the drain, which prevents electrons from passing through and triggering the transistor. The source and the drain of the transistor are connected to the gate, and when a voltage is applied to the gate, it triggers the transistor, allowing electrons to flow through.

The principle of operation of the STI24N60M2 is quite simple. When a voltage is applied to the gate, an electric field is created, which attracts electrons from the source. These electrons then pass through the metal-oxide substrate and then flow to the drain. As the amount of voltage increases, the electric field increases and more current can pass through the transistor.

The STI24N60M2 is used in a wide variety of applications that require high-current operation and efficiency. It is commonly used in switching power supplies and LED lighting systems, as well as in audio amplifiers and motor control systems. In switching power supplies, this type of transistor provides improved efficiency compared to traditional P-type field-effect transistors and bipolar junction transistors.

In sum, the STI24N60M2 is an ideal choice for high-current applications due to its high efficiency and ease of operation. Its single-gate design and insulated-gate technology allow it to minimize resistive gate charge and gate-source capacitance, which leads to improved efficiency and performance. The STI24N60M2 can be used in switching power supplies, audio amplifiers, motor control systems, and LED lighting systems, among many other applications.

The specific data is subject to PDF, and the above content is for reference

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