STI26NM60N Allicdata Electronics
Allicdata Part #:

497-12261-ND

Manufacturer Part#:

STI26NM60N

Price: $ 4.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 20A I2PAK
More Detail: N-Channel 600V 20A (Tc) 140W (Tc) Through Hole I2P...
DataSheet: STI26NM60N datasheetSTI26NM60N Datasheet/PDF
Quantity: 951
1 +: $ 3.62880
10 +: $ 3.23883
100 +: $ 2.65558
500 +: $ 2.15038
Stock 951Can Ship Immediately
$ 4
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STI26NM60N is a high-speed N-channel MOSFET from STMicroelectronics. This device is ideal for use in switching power supplies, battery management systems and motor control applications. It is designed to offer exceptional performance, efficiency and power dissipation. This device also offers high-temperature operation and low gate charge for excellent thermal performance. The STI26NM60N is available in a high-side package with a drain-source voltage ranging up to 600V and a continuous current rating up to 26A.

The STI26NM60N is an N-Channel MOSFET, meaning that it consists of a source, gate, and drain connected to a substrate material. The source and drain are the terminals by which current is allowed to flow, while the gate is the terminal used to control the current flow. This device operates by allowing current to flow through the source-drain path when a voltage is applied to the gate. The voltage determines the conduction threshold of the device, meaning that when the gate voltage is greater than the conduction threshold, current flows through the device.

The STI26NM60N is well-suited for applications that require fast switching and high efficiency. This device is especially useful in automotive and industrial applications due to its excellent thermal performance and durability. It can be used in inverter and charging systems in hybrid-electric vehicles, battery management systems, and motor control applications. Its high switching speed and low gate threshold voltage make it an ideal choice for high-frequency switching applications. Its fast switching speed and low gate charge also reduce switching losses and improve system power efficiency.

The STI26NM60N is designed to provide superior performance and reliability. It has a maximum operating temperature of 175°C and can safely operate in high-temperature environments. It also has a low gate charge which reduces switching losses and thus improves power efficiency. Additionally, it has a convenient high-side package with an improved form-factor for easy PCB layout and high current rating for high power applications.

The STI26NM60N is a high-speed N-Channel MOSFET from STMicroelectronics. It is ideal for use in switching power supplies, battery management systems, and motor control applications due to its high switching speed, low gate threshold voltage, and superior thermal performance. Its high-temperature operation, low gate charge, and improved form-factor make this device an ideal choice for applications requiring fast switching and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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