STI24NM60N

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The STI24NM60N is a type of Power MOSFET by STMicroelectronics. As a n-channel enhancement mode power MOSFET, it is well suited for low side switching application in a variety of industries. This article will discuss the field of applications as well as the working principle of the STI24NM60N.

One of the primary applications of the STI24NM60N is as a switch in power supplies. In a power supply switch, the load is connected through the source and drain terminals of the MOSFET, while the gate terminal is connected to the control circuitry. When the control circuitry activates the MOSFET, current is allowed to flow between the source and drain terminals, providing power to the load, while when the control circuitry deactivates the MOSFET, current is prevented from flowing between the source and drain terminals, thereby disconnecting the load from the power supply. The STI24NM60N is well suited for this application as it has an on-state resistance of 0.5 ohm and a maximum drain current of 62A.

In addition to being used in power supplies, the STI24NM60N can also be used in motor control applications. In motor control circuits, the STI24NM60N may be used in an H-bridge configuration. In an H-bridge configuration, four MOSFETs are connected in such a way as to allow the current to be easily and quickly switched between two directions. This enables the application to switch the direction of a motor, allowing it to rotate clockwise and counterclockwise by simply switching the direction of the current. The STI24NM60N is well suited for this application as it has a low on-state resistance and is capable of switching high current. Furthermore, the STI24NM60N has built-in protection features that prevent the device from failing due to over-current or over-temperature.

In addition to being used in the fields of power supplies and motor control, the STI24NM60N can also be used in lighting applications. The STI24NM60N can be used to switch electric lamps on and off, allowing for efficient control of lighting systems. Furthermore, the STI24NM60N can be used to dim lamps as it has a low on-state resistance, allowing for efficient power control.

Now that the field of applications for the STI24NM60N has been discussed, the next section of this article will discuss the working principle of the STI24NM60N. Like most MOSFETs, the STI24NM60N operates on the principle of an insulated-gate field-effect transistor. It consists of a P-type body, N-type drain and source materials, and a metal oxide gate material. When an electric field is applied between the gate and the source, charge carriers in the drain-source channel are repelled from the gate material, resulting in a depletion layer between the gate and the channel. Since current cannot pass through the channel, no current is allowed to flow between the source and drain terminals. When a positive voltage is applied to the gate, the charge carriers in the depleted region are attracted to the gate material, causing the depletion layer to decrease. This allows current to flow between the source and drain terminals, thereby switching the MOSFET “on”.

In conclusion, the STI24NM60N is an n-channel enhancement mode power MOSFET that is well suited for low side switching applications in a variety of industries. It can be used in power supplies, motor control applications, and lighting systems. Furthermore, the STI24NM60N operates on the principle of an insulated-gate field-effect transistor, where a positive voltage to the gate allows current to flow between the source and drain terminals.

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