STI20N65M5

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The STI20N65M5 is a high voltage type of metal-oxide semiconductor field-effect transistor (MOSFET). It is a single, monolithic, low-power, high-speed Switch Mode Power Supply (SMPS) MOSFET that offers low on-state resistance, fast switching speed, and improved avalanche capabilities. The STI20N65M5 is a particularly useful transistor for use in power supply design, switch mode power supply (SMPS), voltage regulation, and DC switching applications.

The STI20N65M5 is designed with a high-efficiency, single-phase, monolithic MOSFET. It has a high breakdown voltage of 650V, a gate to source voltage (VGS) of 20V, and a typical on-state resistance of 100mΩ. The fast switching speed of the MOSFET makes it suitable for applications such as laptop power adapters, printers, external hard drives, and fan and motor drivers. In addition, the low power loss due to the low on-state resistance, makes it attractive for use in renewable energy applications like solar cell inverters, motor drives, and LEDs.

The STI20N65M5 offers several unique features including low gate charge, low on-state resistance, gate charge controlled balance, and undervoltage protection. The low gate charge helps to reduce device power consumption, while the low on-state resistance reduces power loss. The gate charge controlled balance ensures that the drain current is always kept within a certain level to prevent overloading the device. The undervoltage protection prevents the device from operating at a voltage below its minimum breakdown voltage, which can reduce the damage that occurs from overvoltage.

The MOSFET is designed for use in applications with high power and current requirements, such as automotive and industrial applications as well as in applications requiring high switching speed and fast turn-on or turn-off switching. The STI20N65M5 can be used in Power Factor Correction (PFC) circuits, DC-DC switching supplies, and motor applications. The MOSFET can also be used in Resonant Mode applications like motor speed control.

The working principle of the STI20N65M5 involves a combination of the characteristics of the applied voltage, the MOSFET, and the gate charge characteristics. The applied voltage creates an electric field, which subsequently creates a gate charge. This gate charge helps to control the current by limiting the maximum allowed current. The voltage between the gate and the source of the MOSFET is used to control the electrical current that is allowed to pass through the drain. As the applied voltage increases, the field gate charge increases, meaning that the maximum allowed current decreases and vice versa.

In conclusion, the STI20N65M5 is a single, high voltage, monolithic MOSFET which offers superior performance in SMPS and power supply design applications. It has a high breakdown voltage of 650V, a gate to source voltage of 20V, and a typical on-state resistance of 100mΩ. The STI20N65M5 also has a low gate charge, making it useful in applications with high current and power requirements. The MOSFET is operated using the principles of gate charge control, and the applied voltage affects the maximum allowed current through the device.

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