STI21NM60ND

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STI21NM60ND is a single N-channel MOSFET device which belongs to the STripFET II family of ST Microelectronics. This device has a low on-state resistance and is specifically designed for mobile phone applications. STI21NM60ND provides a wide range of features such as low on resistance, low input capacitance, and fast switching speeds. This device is also capable of operating at a wide range of temperatures from -55°C to +150°C.

The STI21NM60ND is designed to be used in motor drive, solar inverter, and load switch applications. These applications require an N-channel MOSFET with a low on-state resistance. The low on-state resistance of STI21NM60ND makes it a suitable choice for these applications. This device also provides excellent performance in harsh environments due to its wide operating temperature range.

STI21NM60ND is manufactured using ST Microelectronics\' advanced STripFET II process. The STripFET II process combines the advantages of bipolar and MOSFET technologies, which results in low on-state resistance, fast switching, and low input capacitance. The device utilizes a high-voltage silicon-on-insulator (SOI) technology and has a drain-source breakdown voltage of 21V.

The STI21NM60ND works by operating in enhancement mode. In enhancement mode, the gate terminal is at a lower potential than the source terminal, which induces an electric field across the oxide layer and decreases the gate-source capacitance. The decreased gate-source capacitance allows the electrons to be pulled from the source terminal to the drain terminal whenever a positive gate voltage is applied. The electrons then flow from the source to the drain and through the load, thereby providing a path for current to flow.

In conclusion, the STI21NM60ND is a single N-channel MOSFET device specifically designed for mobile phone applications. This device has a low on-state resistance of 21V and is capable of operating at a wide range of temperatures from -55°C to +150°C. STI21NM60ND is suitable for motor drive, solar inverter, and load switch applications. This device is manufactured using the advanced STripFET II process and operates in enhancement mode.

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