STI20N60M2-EP

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The STI20N60M2-EP is a N-channel MOSFET that is produced by STMicroelectronics. This MOSFET is an advanced MOSFET technology that has a maximum current rating of 20A, a maximum voltage of 600V, a drain-source on-state resistance of 16 mΩ, and a gate charge of 273 nC. It is specifically designed for switched-mode power supplies, motor control applications, and power factor correction circuits.

The STI20N60M2-EP has a low on-state resistance that provides high efficiency in circuit operation. It comes with various features including an extremely fast switching speed, improved safe operating area, dv/dt rate protection, over temperature protection, and avalanche rated for better robustness. This MOSFET also features an integrated ESD diode for handling transients and an integrated gate protection diode for increased reliability. In addition, it has a wide range of body-drain breakdown voltages to meet the requirements of different applications.

The STI20N60M2-EP works on a principle called oxide field-effect transistor (FET). This is a semiconductor device in which the flow of current between the source and the drain is controlled by the application of a voltage across a gate electrode. The gate electrode is insulated from the channel between the source and the drain by a thin layer of oxide. When a voltage is applied to the gate, it attracts either electrons or holes to the surface of the channel and this in turn affects the conductivity of the channel.

In the STI20N60M2-EP, the gate-source voltage (VGS) is used to open and close the channel to allow the current to flow from source to the drain. When the VGS is higher than the threshold voltage, the channel opens and current starts flowing from source to drain. On the other hand, when the VGS is lower than the threshold voltage, the channel closes and the current stops flowing. This makes the MOSFET an ideal switch and it is widely used in various types of circuit applications that require switching actions.

The application fields of STI20N60M2-EP are wide and varied. As it is an N-channel MOSFET, it can be used as a high side switch, low side switch, or gate driver in switched-mode power supplies, Power Factor Correction (PFC) circuits, motor control, and automotive applications. It is highly reliable and efficient in these applications.

In conclusion, the STI20N60M2-EP is an advanced N-channel MOSFET with a low on-state resistance and high current rating. It is specifically designed for switched-mode power supply, motor control, and power factor correction circuits. Its main working principle is based on the oxide field-effect transistor and it is widely used in various circuit applications.

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