STI22NM60N

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The STI22NM60N is a high-voltage, low-gate-charge N-channel Power MOSFET chip from STMicroelectronics. This MOSFET offers very low on-state resistance, low gate-charge, and very fast switching speed. It is designed to operate in high-current, high-voltage applications, while still providing the benefits of low loss, low-voltage drive, and low EMI. Designed for use in high-efficient power conversion and low power losses, it is suitable for a variety of motor control, power management, and telecom/data converter applications.

The STI22NM60N is a three-terminal field effect transistor that utilizes a N-type vertical channel. This channel is embedded on the bottom of a floating N-type substrate. In order to control the current level, a gate voltage is applied across the gate electrode. This voltage creates a strong electric field that modifies the cross-sectional profile of the vertical N-channel. The current-carrying ability of the transistor is determined by the gate voltage, drain voltage, drain current, and substrate voltage. The resulting overall current flow is determined by the uniformity of the minor but significant effects of varying capacitances associated with the transistor.

This device features high performance that translates into low power loss, making it an ideal solution for high-efficiency power conversion applications. It also features high triggering voltage, allowing it to be used in high-voltage applications. The low on-state resistance reduces power loss to a minimum, while the low gate-charge is conducive to providing fast switching. This makes the STI22NM60N suitable for motor control, power management, and telecom/data converter applications.

The STI22NM60N is also designed to provide excellent EMI characteristics and operate at temperatures of up to 175°C. This means that it can be used in medical, aerospace, and other environments with extreme temperature requirements without compromising on performance. Additionally, the device has a maximum ratings at a junction temperature of 175°C and is equipped with internal Over-Temperature protection.

In terms of the working principle of the STI22NM60N, the device uses a N-type vertical channel which is surrounded by a gate voltage, creating a strong electric field. The current-carrying ability of the transistor is then determined by the gate voltage, drain voltage, drain current, and substrate voltage. The resulting current flow is determined by the uniformity of the minor but significant effects of varying capacitances associated with the transistor. The gate voltage is then adjusted to control the current level of the device.

In conclusion, the STI22NM60N is a high-voltage, low-gate-charge N-channel Power MOSFET chip from STMicroelectronics designed to operate in high-current, high-voltage applications, while still providing the benefits of low loss, low-voltage drive, and low EMI. This makes it an ideal device for motor control, power management, and telecom/data converter applications. The device is further designed to provide excellent EMI characteristics and operate at temperatures of up to 175°C. It also features high triggering voltage and low on-state resistance. The STI22NM60N operates according to the principle that its current-carrying ability is determined by the gate voltage, drain voltage, drain current, and substrate voltage, and the level of current flow is adjusted by adjusting the gate voltage.

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