STI21N65M5

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The STI21N65M5 is a N-Channel enhanced mode MOSFET (metal oxide semiconductor field effect transistor). It is fabricated in ST\'s VIPower process and is a highly efficient MOSFET which combines the highest level of performance, robustness and cost effectiveness when compared to competing technologies.

The STI21N65M5 is a 500V N-Channel MOSFET that is available in three package formats: TO-220FP, DPAK and SOT-223. The transistor has a maximum continuous drain current capability of 21A, making it capable of delivering high power even at high frequencies. Additionally, its RDS(on) values are exceptionally low, thereby enabling the efficient power conversion of very fast switching applications.

The STI21N65M5 is particularly suitable for use in switched-mode power supplies, power inverters, and motor control applications. It is also suitable for use in high frequency converters and other power management applications, as well as in high power audio and non-audio digital amplifier stages. Due to its low total gate charge, the MOSFET also offers fast switching performance and increased efficiency when coupled with suitable gate driver circuitry.

The STI21N65M5 is a unique high performance MOSFET that offers a high level of performance and robustness. It has an integrated integrated high-temperature sensing capability, making it suitable for applications requiring thermal shut-down protection. Additionally, its integrated avalanche protection feature ensures reliable and robust operation even in the presence of high currents and high pulse-by-pulse currents.

The STI21N65M5 works on the principle of an intense electric field which is created by applying a voltage between the gate and the source terminals. By applying a negative gate bias to the STI21N65M5, a depletion zone is created around the transistor\'s drain and source regions. As a result, the flow of electrons through the channel is restricted, thus allowing current to flow only when the gate voltage is positive. This is referred to as the \'enhanced mode\' of MOSFET operation.

The current flowing through the transistor is controlled by the gate voltage. If a higher gate voltage is applied, more current will be allowed to flow through the channel and vice versa. The size of the channel is determined by the ratio of the width to length. If the width is larger, the current flow will be greater for the same gate voltage. If the length is greater, the current flow will be less for the same gate voltage.

The MOSFET also utilizes a body diode to ensure efficient energy transfer. This diode is formed by connecting the drain and source terminals of the MOSFET and is used to provide reverse blocking capability which allows the device to protect against reverse currents. Additionally, the body diode also helps with current biasing operations.

In summary, the STI21N65M5 is a highly efficient and powerful N-channel MOSFET that is suitable for use in a wide range of applications including power supplies, motor control, audio amplifiers, and power management systems. This transistor combines high power efficiency and low operating temperature with the highest levels of performance and robustness. With its integrated temperature sensing and avalanche protection, the STI21N65M5 makes an excellent choice for applications requiring reliable and robust operation, even when exposed to high current and voltage pulses.

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