| Allicdata Part #: | 497-12606-5-ND |
| Manufacturer Part#: |
STP14NF12FP |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 120V 8.5A TO-220FP |
| More Detail: | N-Channel 120V 8.5A (Tc) 25W (Tc) Through Hole TO-... |
| DataSheet: | STP14NF12FP Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 180 mOhm @ 7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
| Drain to Source Voltage (Vdss): | 120V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The STP14NF12FP is a N-Channel power field effect transistor (FET) used in a variety of applications. This MOSFET is able to handle up to 14A of current and features an RDSon rating of 0.08ohms. This FET is ideal for use in demanding applications such as motor control, audio amplifiers, and automotive switch applications.
A FET performs by using an electric field to move electrons from one point to another. The STP14NF12FP operates by using the electric field created between its gate and source leads to control the flow of electrons through the channel. By using a charge carrier such as holes or electrons to create an electric field, the STP14NF12FP will open or close its channel depending on the voltage applied to the gate.
When no voltage is applied to the gate of the STP14NF12FP, this causes the transistor to stay in a closed channel state. This means that a minimum resistance is presented at the source and drain terminals and the electrons can’t flow, thus no current will be able to flow through the channel. When the gate is positively charged, this will cause the transistor to turn on or open the channel. This will allow the electrons to flow in the transistor, which will result in current flow from the source to the drain. As the gate voltage increases, the amount of current flowing through the transistor will also increase.
The main advantages of using FETs over other types of transistors are that they have a faster switching speed and handle larger currents. This makes the STP14NF12FP ideal for applications that require fast switching, such as digital logic control or motor control. FETs also have a lower voltage drop over the channel, which helps to reduce power loss.
FETs are also much easier to use and integrate into circuits since they don\'t require any additional components such as an amplifier or bias voltage. The STP14NF12FP is an ideal component to use in many different types of applications since it can handle a high current, provides a low RDsON, and is very easy to incorporate into a design. It is important to keep in mind, however, that FETs require good heat sinking and proper handling techniques in order to ensure that the device operates reliably and safely.
The specific data is subject to PDF, and the above content is for reference
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STP14NF12FP Datasheet/PDF