| Allicdata Part #: | 497-2766-5-ND |
| Manufacturer Part#: |
STP16NF06 |
| Price: | $ 0.75 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 60V 16A TO-220 |
| More Detail: | N-Channel 60V 16A (Tc) 45W (Tc) Through Hole TO-22... |
| DataSheet: | STP16NF06 Datasheet/PDF |
| Quantity: | 5255 |
| 1 +: | $ 0.75000 |
| 10 +: | $ 0.72750 |
| 100 +: | $ 0.71250 |
| 1000 +: | $ 0.69750 |
| 10000 +: | $ 0.67500 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 45W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Series: | STripFET™ II |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 8A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The transistors are commonly seen in electrical and electronic equipments. Among them, STP16NF06 is one of the most popular among them. This power transistor is a N-channel enhancement mode with a monolithic construction that makes it easy to install and use in a wide variety of applications.
The STP16NF06 offers a wide range of features such as high power handling capacity, high frequency switching capability and low gate charge. It has a current rating of 25A, a breakdown voltage of 30V and a gate capacitance of 16pF. This makes it suitable for operating at switching frequencies up to 10MHz.
STP16NF06 is used in a variety of consumer, industrial and automotive applications. For instance, it is used in electronic power supplies, embedded systems, display lighting and motor control applications. The device is also suitable for high-side and low-side switch applications.
The working principle of STP16NF06 is very simple. The device consists of two parts: a N-channel MOSFET and an insulated gate bipolar transistor (IGBT). The switching of the MOSFET is controlled by the gate voltage applied to it, while the IGBT blocks current flow during operation. The current conducting capability of the device is determined by the gate voltage and the voltage applied across the load that is connected to the device.
The STP16NF06 consists of two high-side and low-side MOSFETs in a dual N-channel package. The low-side MOSFET acts as the pull-down device and the high-side MOSFET acts as the pull-up device. When an input voltage is applied, the low-side device will conduct current from ground to the output voltage. The high-side device will then turn on and off according to the output voltage.
The device is also designed to offer improved EMI (electromagnetic interference) immunity due to its high input impedance. This feature makes the device suitable for high-speed switching applications where the input signal needs to be electrically isolated from the output signals. The device is also available in a small surface-mount package, which makes it ideal for space-constrained applications.
The STP16NF06 is a reliable and efficient power transistor that can be used in a variety of applications. It is easy to install and use, and its high-speed switching capability means it is ideal for high-speed applications. Its low gate charge and high power handling capacity make it suitable for industrial and automotive applications. Its wide range of features make it a good choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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STP16NF06 Datasheet/PDF