STP18NM60ND

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP18N60ND is a product of STMicroelectronics, a leader in the semiconductor market. It is a N-channel, enhancement-mode, MOSFET transistor which features a suprabarrier gate structure, and is manufactured with ST\'s high voltage MDmesh™ series process technology. With its low on-resistance and optimized gate charge, the STP18N60ND is suitable for a variety of applications, including those where high efficiency, high power levels, and low on-resistance are needed. Its small footprint also makes it an ideal choice for portable devices.

The key application fields for the STP18N60ND include DC-DC converters, high-power Mosfets, power switches, amplifiers, and motor control. In DC-DC converters, for instance, it can be used as a switch element between the input and output stages, thus allowing for the efficient conversion of power from one voltage level to another. The STP18N60ND can also be used as a power switch in a high-power Mosfet application, where it can be used to drive large currents while maintaining high levels of efficiency. In amplifiers and motor control, the STP18N60ND can help to achieve high power levels, while operating at low on-resistance levels.

The mechanism by which the STP18N60ND operates is based on the principles of MOSFET transistors. A MOSFET is a voltage-controlled, unipolar, insulated gate field effect transistor, which contains an insulated gate that is used to control the flow of electrons from the source to the drain. When a voltage is applied from the gate to the source, an electric field is created, which attracts electrons to the gate and allows them to pass through. The amount of current that passes through is controlled by the gate voltage. When the gate voltage is reduced, the drain-source voltage decreases, thus limiting the flow of current.

The STP18N60ND features a high voltage MDmesh series process, which is used to increase the performance and reduce the on-resistance of the transistor. This process allows the transistor to operate with higher currents and lower levels of on-resistance than conventional transistors. This in turn reduces power losses and increases the efficiency of the device, making it an ideal choice for a variety of applications. Additionally, the STP18N60ND has an optimized gate charge, which increases its switching speed and allows it to handle large voltages without sacrificing performance.

The STP18N60ND is the perfect choice for a variety of applications due to its low on-resistance, high efficiency, and small footprint. It is ideal for use in DC-DC converters, high-power Mosfets, power switches, amplifiers, and motor control. Its optimized gate charge and high voltage MDmesh series process make it an ideal choice for applications where high power levels, low on-resistance, and high efficiency are required.

The specific data is subject to PDF, and the above content is for reference