STP14NM65N

The STP14NM65N is a high voltage and high current N-channel Power MOSFET which is designed specifically to minimize losses in power conversion applications. It is a powerful device that is capable of driving 6A of continuous drain current over a wide operating temperature range. This MOSFET is a part of STMicroelectronics’ family of high-efficiency PowerMOS transistors for high frequency, high current and high voltage applications.

STP14NM65N is especially suited for use in power circuits powered by high voltage sources such as DC-DC converters, motor control applications, and power inverters. The device has an internal source resistor which ensures that the source current does not exceed the maximum rating for safe operation. This MOSFET is also suitable for battery-powered applications due to its wide operating range and low standby current consumption.

The working principle behind this MOSFET is the same as any other MOSFET. The device consists of a gate, source, and drain. The gate is electrically isolated from the other two regions, meaning that it must be externally driven, usually by a voltage or current source. When the gate voltage, or gate current, is applied, then a channel is created between the source and the drain, allowing electrons to flow between them and creating a current.

The most important parameter of the STP14NM65N MOSFET is its drain-source breakdown voltage, which is the maximum voltage it can withstand before it will fail. This parameter is specified as V(BR)DSS, and it is the maximum voltage that comes from the drain to the source when the gate is grounded. The STP14NM65N has a V(BR)DSS of 800 volts, meaning that it can withstand up to 800 volts coming from the drain to the source without failure.

Other important parameters of this MOSFET include its drain-source resistance, gate threshold voltage, and gate-source voltage. The drain-source resistance is specified as RDS(on), and it is the value of resistance that is measured between the drain and source when the gate is driven by the correct voltage and the MOSFET is switched on. The gate threshold voltage is the voltage at which the MOSFET will start conducting current, and is specified as VGS(th). The gate-source voltage is specified as VGS, and it is the voltage that must be applied between the gate and the source in order to start the flow of electrons between the drain and the source.

In summary, the STP14NM65N is a Power MOSFET from STMicroelectronics’ family of high efficiency transistors for use in power circuits powered by high voltage sources. It is able to drive up to 6A of continuous drain current over a wide operating temperature range. Its drain-source breakdown voltage is 800 volts, making it suitable for high voltage applications. Other important parameters of the STP14NM65N are its drain-source resistance, gate threshold voltage, and gate-source voltage.