STP11NM60FP Allicdata Electronics
Allicdata Part #:

497-3181-5-ND

Manufacturer Part#:

STP11NM60FP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 11A TO220FP
More Detail: N-Channel 600V 11A (Tc) 35W (Tc) Through Hole TO-2...
DataSheet: STP11NM60FP datasheetSTP11NM60FP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: MDmesh™
Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP11NM60FP is an N-Channel, Enhanced Transitional-Mode Power MOSFET. It is an integrated field-effect transistor that is used in transistors and transistors-FETs, then further specialized as a MOSFET and single. It offers the high levels of performance and long-term reliability that one expects with this type of transistor.

The application field, or the most typical use, that the STP11NM60FP covers is power switching applications such as power switches, converters, inverters, and high-power LED controllers. It is suitable for use in hard switching and resonant switching operation, as it can provide very low conduction losses over a wide range of operating conditions.

The STP11NM60FP features a low on-resistance of 11 mohms and a drain-source maximum voltage rating of 600 V. Its low gate charge ensures that the device can switch very rapidly and that it has a low gate-source voltage. The device also features paralleling capability, meaning that the same device can be used in multiple configurations. This feature increases the power output of the device, while also creating a more efficient solution.

The working principle of the STP11NM60FP follows similar principles to other types of transistors. In simple terms, it uses an electric charge, or current, to turn on or off an electrical signal that controls the power supply. The power translation is then sent to the required output. The device consists of an N-channel and a P-channel in which current flows between the drain and source when the gate is connected to a positive voltage.

In more detail, a STP11NM60FP is controlled by a gate voltage. When the gate voltage is a positive voltage, the electrons flow from the drain to the source and the device is in an ‘on’ state. When the gate voltage is at zero volts, there is no current flow and the device is in an ‘off’ state. The device can also be turned off by simply reversing the gate voltage.

In addition to its use for power switching applications, the STP11NM60FP can be used for a number of other applications. It is well suited for use in energy-saving applications such as LED lighting, solar power systems, and other types of renewable energy systems. It can also be used in motor drives, machine control, audio systems, and other consumer-level products.

The combination of low on-resistance and fast gate switching speed makes the STP11NM60FP an ideal choice for a wide range of applications. It offers excellent reliability, low power consumption, and cost-effectiveness, making it a smart choice for any power-switching application.

The specific data is subject to PDF, and the above content is for reference

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