STP12NM50 Allicdata Electronics
Allicdata Part #:

497-2666-5-ND

Manufacturer Part#:

STP12NM50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 12A TO-220
More Detail: N-Channel 500V 12A (Tc) 160W (Tc) Through Hole TO-...
DataSheet: STP12NM50 datasheetSTP12NM50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 50µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: MDmesh™
Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP12NM50 power field effect transistor (FET) is a single monolithic step-down switching regulator that provides all protection features, an internal power switch, low RDS (ON), and a maximum voltage of 500 V. The device is ideal for use in applications such as motor control, audio amplifiers, and portable computers, as well as a variety of other power management applications.

Functionally, the STP12NM50 power MOSFET consists of two voltage channel Enhancement-Mode (EM) field effect transistors that are connected in a bridge configuration. The high- and the low-side MOSFETs drive the load in opposite directions. The source of the low-side FET is grounded and the source of the high-side MOSFET receives either a high or low voltage signal. This creates a voltage across the load and thus regulates the power to it.

The power MOSFET has a high current carrying capability, enabling it to drive large loads ranging from a few microamps to hundreds of amps. Additionally, it operates with a fast switching speed, making it suitable for high-efficiency power applications. Furthermore, its low on-resistance, RDS (ON), ensures better power efficiency.

The STP12NM50 offers numerous protection features, including current limit protection and thermal shutdown. The device is designed to protect against over-current, over-voltage and overheating conditions with built-in self-protection mechanisms. It also provides a gate-to-source over-voltage protection with clamping and a discharge path.

The STP12NM50 power MOSFET has a low input voltage range, allowing it to be suitable for applications such as non-isolated point-of-load converters, automotive body- electronics and other general purpose applications. It is also capable of switching high-side and low-side loads and can support reverse body diode protection.

In summary, the STP12NM50 is the perfect choice for power management applications, offering a wide range of features and protection, high current carrying capability and low on-resistance. It is a robust, cost-effective solution for controlling power in power management applications, providing reliable operation and protection from dangerous conditions.

The specific data is subject to PDF, and the above content is for reference

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