
Allicdata Part #: | 497-2666-5-ND |
Manufacturer Part#: |
STP12NM50 |
Price: | $ 1.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 12A TO-220 |
More Detail: | N-Channel 500V 12A (Tc) 160W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.17000 |
10 +: | $ 1.13490 |
100 +: | $ 1.11150 |
1000 +: | $ 1.08810 |
10000 +: | $ 1.05300 |
Vgs(th) (Max) @ Id: | 5V @ 50µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP12NM50 power field effect transistor (FET) is a single monolithic step-down switching regulator that provides all protection features, an internal power switch, low RDS (ON), and a maximum voltage of 500 V. The device is ideal for use in applications such as motor control, audio amplifiers, and portable computers, as well as a variety of other power management applications.
Functionally, the STP12NM50 power MOSFET consists of two voltage channel Enhancement-Mode (EM) field effect transistors that are connected in a bridge configuration. The high- and the low-side MOSFETs drive the load in opposite directions. The source of the low-side FET is grounded and the source of the high-side MOSFET receives either a high or low voltage signal. This creates a voltage across the load and thus regulates the power to it.
The power MOSFET has a high current carrying capability, enabling it to drive large loads ranging from a few microamps to hundreds of amps. Additionally, it operates with a fast switching speed, making it suitable for high-efficiency power applications. Furthermore, its low on-resistance, RDS (ON), ensures better power efficiency.
The STP12NM50 offers numerous protection features, including current limit protection and thermal shutdown. The device is designed to protect against over-current, over-voltage and overheating conditions with built-in self-protection mechanisms. It also provides a gate-to-source over-voltage protection with clamping and a discharge path.
The STP12NM50 power MOSFET has a low input voltage range, allowing it to be suitable for applications such as non-isolated point-of-load converters, automotive body- electronics and other general purpose applications. It is also capable of switching high-side and low-side loads and can support reverse body diode protection.
In summary, the STP12NM50 is the perfect choice for power management applications, offering a wide range of features and protection, high current carrying capability and low on-resistance. It is a robust, cost-effective solution for controlling power in power management applications, providing reliable operation and protection from dangerous conditions.
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