STP17N62K3

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The STP17N62K3 is an advanced MOSFET, short for Metal-Oxide-Semiconductor Field-Effect Transistor, that is typically used in switching and boosting applications. It is part of STMicroelectronics\' PowerMESH family of MOSFETs, and it has a number of features that make it especially useful in these applications.

Features

The STP17N62K3 is an advanced power MOSFET with a vertical power MESH configuration, with an internal gate resistance of 32 mOhm and an improved layout allowing for better heat dissipation. It also has a very low threshold voltage of 2.5V, which makes it suitable for use in low voltage switching applications. Other features include high ESD robustness, low gate charge, and low Qgg for improved switching performance. Additionally, it is a space-saving device, measuring only 2.8mm x 2.8mm.

Applications

The STP17N62K3 is designed for applications in which high power efficiency is needed, such as DC-DC converters, automotive applications, and industrial circuits. It can be used for high efficiency buck-boost converters, for voltage regulation and inrush current control, as well as for synchronous buck diodes and applications such background lighting and security camera shutters. It can also be used in switching power supplies, small motor drive and automotive power systems, voltage regulator modules (VRM), and as a replacement for MOSFETs in existing designs. Additionally, it can be used in a variety of consumer applications, such as home appliances, consumer electronics, smart meters, and more.

Working Principle

The working principle of the STP17N62K3 is based on the basic Metal-Oxide-Semiconductor (MOS) structure of a single transistor. The MOSFET consists of a layer of electrons trapped between two metal gates covered by an insulating oxide layer. When a voltage is applied between the source (S) and drain (D) terminals, the electric field generated attracts the electrons in the channel, creating a conductive path between the source and the drain. By varying the voltage applied between the source and drain, the resistance of the conduction path can be controlled, allowing for precise control of the current flow.

The STP17N62K3 is a type of MOSFET called a P-Channel Enhancement mode MOSFET. This means that the transistor is in its off-state initially and only conducts when a voltage is applied to the gate terminal, causing the MOSFET to conduct between the source and drain.

The STP17N62K3 has a very low threshold voltage of 2.5 V and is therefore suitable for low voltage switching applications. Furthermore, it has a very low internal gate resistance of 32 mOhm, allowing for better power performance, and a low Qgg, allowing for improved switching behaviour. Additionally, it has a space-saving V-shape package and is designed for improved heat dissipation, providing a more reliable performance in a wide range of applications.

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