STP10NM60ND

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	70W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	577pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	FDmesh™ II
Rds On (Max) @ Id, Vgs:	600 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The STP10NM60ND by STMicroelectronics is a N-channel 600V, 9.1A, SuperMESH Power MOSFET. In this article, we will cover the application field and working principle of the STP10NM60ND.Application FieldThe STP10NM60ND is a 600V power MOSFET designed for high current applications such as automotive, industrial, and switch mode power supplies. It can handle up to 9.1A which makes it suitable for driving inductive loads such as motor drives, DC-DC converters, AC-DC converters, and protection circuits. It is also suitable for switching applications that require high load current such as lighting, air conditioning, and SMPS.Additionally, the STP10NM60ND is designed to reduce conduction and switching losses, as well as minimize thermal management costs. It can operate in a temperature range from -55 °C to 150 °C, making it suitable for applications operating in extreme temperature conditions.Working PrincipleThe STP10NM60ND is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is a type of transistor whose switching operation is controlled by the voltage applied to its gate electrode. At the gate, a bias voltage is used to reduce the width of the depletion layer between the drain and source; this reduces the number of carriers that can travel between these two terminals, thereby controlling the current flowing through the transistor. Consequently, N-channel transistors are generally used in power applications because of their high current capacity and low voltage drop.Similar to most power MOSFETs, the STP10NM60ND has a low on-resistance, which minimizes conduction losses and provides fast switching action. In addition, the STP10NM60ND offers improved gate-charge performance and a wide range of Rds(on) (source-drain resistance). It also features a high current capability and an intrinsic diode with a slow turn-off and fast turn-on time.ConclusionThe STP10NM60ND from STMicroelectronics is an N-channel 600V, 9.1A, SuperMESH Power MOSFET. It is ideal for automotive, industrial, and switch-mode applications. Its features include low on-resistance, improved gate-charge performance, a wide range of Rds(on), and an intrinsic diode with a slow turn-off and fast turn-on time. Additionally, it can operate in a temperature range from -55 °C to 150 °C.

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