STP140NF55

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STP140NF55 is an N-channel trellis field effect transistor with a high performance. It is classified as a type of single MOSFET with a power output range of 55 V and a power rating of 140 W. The drain-source breakdown voltage for this device is rated 35 V and has a gate-source breakdown voltage rating of 9 V. Its maximum gate threshold voltage is 4.5 V and its maximum drain current, drain source on-resistance, and insulation resistance are 5.0 A, 3.2 mΩ and 150 kΩ, respectively. It provides the highest robustness, reliability, and integration of advanced power conversion solutions.

STP140NF55 is mainly used in consumer products such as Personal Computers, Desktop Computers and Display Monitors, Office Equipment and Digital Printing as well as Industrial applications such as Variable Speed Drives and Automotive applications. It is also used in power supply and audio amplifier applications.

The working principle of STP140NF55 is based on the transistor properties of an insulated-gate field-effect transistor (IGFET), also known as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The IGFET works by allowing the transistor to change its conductivity depending on the voltage applied to its gate terminal- a signal that controls how open or closed the transistor is. When the gate is on, a current will flow from the drain to the source. In this state, the transistor is said to be in saturation. If the gate voltage is increased, the source-drain current decreases.

The STP140NF55 also features a high-speed switching, thereby making it a perfect solution for applications in high-speed data transmissions such as Gigabit Ethernet. It also provides superior immunity to Electro-Magnetic Interference (EMI) and fast switching times which enable it to drive larger capacitive and inductive loads. Additionally, its low on-state resistance enables efficient power conversion in high-power applications.

For increased safety and protection, the STP140NF55 also features a compact size and low thermal resistance. Its thermally conductive packages ensure excellent heat transfer, which also minimizes package power losses. Moreover, it offers a balanced drive channel with low saturation voltage, superior over-current protection, temperature protection and overvoltage protection, and an extremely low on-resistance.

In conclusion, STP140NF55 is a single high performance N-channel MOSFET that offers superior current and voltage ratings, outstanding reliability and a long product service life. It is a great solution for designers looking to create high-power, low-noise, and ultra-fast switching applications. The device provides excellent EMI protection, fast switching times and low on-state resistance.

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