STP12NM60N

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STP12NM60N is a N-channel, medium-voltage MOSFET with a 600V rating. It belongs to the STP12NF Series and is manufactured by STMicroelectronics. The MOSFET is designed for high-performance, high-reliability power switching applications, such as those found in motor drives and power supplies. The STP12NM60N is especially suited for applications requiring low on-state resistance at high switching frequencies, making it ideal for switch-mode power supplies, where the performance required is critical.

The STP12NM60N features a plastic mold package, with a current rating of 12A and a voltage rating of 600V. The gate charge, Qgs, and the gate-drain charge, Qgd, are Power MOSFETs are typically used as electronic switches, as they can be easily turned on or off, allowing a small current to control a large current. The main benefit of using Power MOSFETs is their low power consumption and low on-resistance, allowing them to be used in high-efficiency, high-power applications. In addition, Power MOSFETs are relatively simple to use and design with, compared to other power transistors.

The STP12NM60N is a high voltage MOSFET that is used for high-efficiency, high-power applications. The MOSFETs is built utilizing STMicroelectronics\' advanced, high-voltage, low-loss Silicon on Insulator (SOI) process. This process allows for higher voltages and current handling capabilities than conventional power MOSFETs, and the SOI technology helps extend the lifetime of the device, resulting in higher reliability and less maintenance.

The STP12NM60N is a dual-operation, single-gate MOSFET with a drain-source voltage rating of 600V and a current rating of 12A. It features an adjustable gate threshold voltage, allowing it to be used in a wide range of switching applications. The MOSFET also features a built-in ESD protection circuit, enabling the user to switch high-current loads without fear of destruction of the device due to electrostatic discharge.

The STP12NM60N uses a novel design to minimize the on-state resistance, resulting in lower power dissipation for higher performance applications. This device also uses an N-channel MOSFET with a low gate voltage and low on-state resistance to minimize losses, improve efficiency and increase power.

In summary, the STP12NM60N is a high-power, medium-voltage MOSFET designed for high-efficiency, high-performance applications. It features a low on-state resistance, a low gate voltage, a high-voltage rating, a high-switching frequency, and a built-in ESD protection circuit. The device is ideal for use in switch-mode power supplies and motor drive applications, due to its low power consumption and low on-state resistance.

The specific data is subject to PDF, and the above content is for reference