STP100N8F6

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	176W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5955pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	100nC @ 10V
Series:	STripFET™ F6
Rds On (Max) @ Id, Vgs:	9 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STP100N8F6 Application Field and Working Principle

Introduction

The STP100N8F6 is a n-channel enhancement mode power MOSFET (metal-oxide-semiconductor field effect transistor). This transistor is designed to have low gate charge, fast switching features, low input and output capacitance, and an ESD rating of 2.5KV. This makes it ideal for application in industrial, commercial, and automotive equipment with synchronous rectification and PWM applications.

Application Field

The STP100N8F6 is used for a variety of applications. It can be used for power MOSFET switching applications. The MOSFET can be used in motor drives, traction-control systems, motor starter relays, automotive lighting, and even water metering applications. It is also used in a number of industrial applications, such as relay drivers and adjustable voltage sources.The STP100N8F6 is also well-suited for high side and low side switching circuits, DC/DC converter circuits, and power converters. It can also be used in circuits where the gate must be driven from a low voltage input.There are three separate terminals for the STP100N8F6. They are the gate, drain, and source. The source is the input terminal of the transistor, the gate is the control terminal, and the drain is the output terminal.

Working Principle

The STP100N8F6 is a four-terminal integrated circuit. It is composed of two separate terminals for its gate and drain, as well as two additional terminals for the source and gate control.When a voltage is applied to the gate of the STP100N8F6, its conductivity increases. As the voltage increases, the current flow through the transistor increases. This is because the greater the voltage applied to the gate, the thinner the channel becomes, and thus the easier it is for current to flow through the channel.The source terminal is the input, or the positive terminal of the transistor. The gate control terminal is used to control the current flow through the transistor by providing the desired voltage. The drain terminal is the output, or the negative terminal of the transistor.

Conclusion

The STP100N8F6 is a power MOSFET with excellent switching features, low gate charge, low input and output capacitance, and an ESD rating of 2.5KV. It is well-suited for high side and low side switching circuits and DC/DC converter circuits. Furthermore, it can be used for powering automobiles, lighting, motor drives and traction control systems, among other applications. By understanding its application and working principle, one can see how this transistor can be used in many different types of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description