SUP90140E-GE3

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The SUP90140E-GE3 is a single N-Channel Enhancement Mode Field Effect Transistor which provides specific characteristics and application-level benefits in both equipment design and system performance. It is well suited for applications such as general N-Channel amplifier/driver, digital control, and various power MOSFET drivers.

Introduction

The SUP90140E-GE3 is a single N-Channel Enhancement Mode Field Effect Transistor (FET) developed and manufactured by Shoreline Systems. It is intended to provide a self-aligning, high-voltage-capable, low on-resistance solution for applications in both equipment design and system performance. This FET is specifically designed to provide a wide variety of operating characteristics, including low transition times and very low on-state resistance, making it suitable for high-speed operations and power efficiency.

The SUP90140E-GE3 is the current generation of the SUP90140 series, which includes versions optimized for more general purpose use such as low-power switch and audio amplifier/driver. The SUP90140E version utilizes a low-noise process and optimized silicon to deliver superior RF performance for applications like high-speed switching and low-noise amplifier designs.

Applications of SUP90140E-GE3

The SUP90140E-GE3 is an enhancment-mode, N-channel FET; as such, it is ideal for a wide variety of applications, ranging from general-purpose fast-switching and switch driver circuits to digital logic and low-noise amplifier designs.

This FET is suitable for applications where high-voltage capability, low-power switch control, fast switching times, and high efficiency and reliability are of utmost importance. Examples include electrical motor control, HVAC (heating, ventilation, and air conditioning) control, telecom equipment, and high-voltage power supplies and battery-charging applications.

The SUP90140E-GE3 is particularly well-suited for use in motor drive applications due to its low transition times and high frequency capability. With its low on-resistance and high-switching frequency, this FET can provide increased efficiency and improved system performance in motor drive applications.

This FET is also particularly useful for automotive applications where high-current switches and drivers are needed. Its low Rds(on) and low gate-threshold voltage make it suitable for use in automotive powertrain and power management systems.

Working Principle of SUP90140E-GE3

The SUP90140E-GE3 is an enhancement-mode, N-channel field effect transistor, meaning it operates by allowing a small current to flow from the drain to the source when a larger voltage is applied to the gate. This current is proportional to the drain-to-source voltage, referred to as “VDS.”

The SP90140E-GE3 is an edge-terminated device, meaning that the gate and source terminals are both located at the top of the device and the drain terminal is at the bottom. It is a self-aligning device which features a vertical internal structure and operates through a vertical electric field.

An applied voltage between the gate and source terminals causes the device’s “internal threshold voltage,” referred to as Vth, to be exceeded and current will flow. This current is what is known as the drain current, referred to as “I DS.”

The amount of current that can be passed through the device is limited by the amount of voltage applied to the gate. As the voltage increases, the amount of current that can be passed increases. This relationship can be seen in the “Transfer Characteristic” which is a graph of the drain current versus the gate-to-source voltage.

The SUP90140E-GE3 is also capable of providing a very fast switching time, which is beneficial for high-speed operations, as well as a low off-state leakage current which is beneficial for power efficiency.

Conclusion

The SUP90140E-GE3 is suited for a wide range of applications, from general-purpose switching and switch driver circuits to digital logic and low-noise amplifier designs. With its low transition times, low on-state resistance, and high-voltage capability, it provides both equipment design and system performance benefits. Its enhancements to internal structure and silicon make it capable of achieving ultra-high performance in short switching times and high-frequency operations.

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