SUP90N15-18P-E3

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SUP90N15-18P-E3 is a single N-channel enhancement mode MOSFET designed for use in switching and amplifier systems in applications such as load switches, DC-DC converters and levelshifters. It has a rated drain-source breakdown voltage of 15-18V, a maximum drain-source on-state resistance of 5.6 ohm and a typical gate-source threshold voltage of 4.3V. This makes it suitable for a wide range of applications.

The operation principle of SUP90N15-18P-E3 is that of a voltage controlled, unipolar device. It works by passing an electric current from the source to the drain through an insulated gate when a voltage is applied across the gate and source electrodes. The transistor is in the “on” state when the gate voltage is below the threshold voltage, and is in the “off” state when the gate voltage is greater than the threshold voltage. This makes it suitable for low-voltage, high-speed switching and logic applications as well as for audio and other high-frequency switching.

SUP90N15-18P-E3 is suitable for a variety of applications including power management, Lighting Control, Battery Management, Motor and Motor Control, RF Applications, and Low Voltages Systems. It can be used in high-voltage and high-speed switching and logic applications, such as DC-DC converters, and is suitable for automotive, industrial and consumer applications due to its low on-state resistance and low gate-source threshold voltage. It can also be used for RF and low voltage systems, making it a versatile device.

SUP90N15-18P-E3 is also suitable for many power applications, such as power management and motors control due to its high blocking voltage and low on-state resistance. Thus, it is ideal for low loss, high blocking voltage applications, such as load switching and level shifting. Therefore, it is ideal for load switches and level shifting applications that require rapid switching and switching while maintaining high voltage and low loss.

In conclusion, SUP90N15-18P-E3 is a versatile single N-channel enhancement mode MOSFET which is ideal for a variety of applications, including high voltage and high-speed switching and logic applications, power management, lighting control, motor and motor control, RF applications and low-voltage systems. It has low on-state resistance and low gate-source threshold voltage and is suitable for automotive, industrial and consumer applications due to its high blocking voltage and low on-state resistance. Thus, it is highly suitable for low loss, high blocking voltage applications such as load switching and level shifting.

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