SUP90N03-03-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SUP90N03-03-E3 is a single N-Channel enhancement mode MOSFET. This semiconductor device combines basic MOSFET concepts like high input impedance, a fast switching action and a low on-state resistance with the capability to control either analog or digital signals. With a relatively low input voltage threshold and low gate charge, the SUP90N03-03-E3 is suitable for many applications, including switching, regulating, gate driver power (ICS/erosion), and voltage controlled amplifiers.

The main function of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is to act as a switch, allowing current to be controlled by voltage. The SUP90N03-03-E3, like other MOSFETs, requires that the gate voltage be higher than the source voltage in order to turn on the device. When this occurs, current can flow through the channel and out of the drain terminal. The size of the channel between the source and drain is controlled by the gate voltage; this is referred to as the channel width modulation effect and makes MOSFETs extremely useful for controlling both analog and digital signals.

The SUP90N03-03-E3 MOSFET is a fairly low power device, making it ideal for low power applications. The device has a breakdown voltage of 100V, an on-state resistance of 4.9mΩ, a maximum continuous drain current of 50A, and a power dissipation of 150W. The gate threshold voltage is 2.0V, making it relatively easy to turn on and off even with a low voltage source.

One of the main benefits of the SUP90N03-03-E3 is its low gate charge. Typical gate charge for this device is 5nC, making it suitable for high speed switching applications and low power loss. The device also has a very low input capacitance, making it ideal for use in high frequency switching applications, where efficient power and signals are of prime importance.

The SUP90N03-03-E3 is a perfect device for applications where both analog and digital signals need to be controlled, such as switching, regulating, gate driver power (ICS/erosion), and voltage controlled amplifiers. The device’s low on-state resistance and gate charge, combined with its high breakdown voltage and high power dissipation, make it a great choice for these kinds of applications. The device’s fast switching action, low input capacitance, and low source-drain capacitance also make it very versatile in both analog and digital circuits.

The SUP90N03-03-E3 is an extremely versatile MOSFET, making it suitable for a wide range of applications. Its low input voltage threshold and low gate charge, combined with its excellent on-state resistance, fast switching action, and high power dissipation, make it an excellent choice for switching, voltage control, and driving power applications.

The specific data is subject to PDF, and the above content is for reference