SUP90N04-3M3P-GE3 Allicdata Electronics
Allicdata Part #:

SUP90N04-3M3P-GE3-ND

Manufacturer Part#:

SUP90N04-3M3P-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 90A TO-220AB
More Detail: N-Channel 40V 90A (Tc) 3.1W (Ta), 125W (Tc) Throug...
DataSheet: SUP90N04-3M3P-GE3 datasheetSUP90N04-3M3P-GE3 Datasheet/PDF
Quantity: 269
Stock 269Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5286pF @ 20V
FET Feature: --
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The SUP90N04-3M3P-GE3 is one of the most popular and widely used type of Field-Effect Transistor (FET), with the letter ‘P’ standing for the p-type of silicon material it is manufactured from. The device was designed and developed by transistor-manufacturing giant, Vishay. It is a high-performance, single-gate, long-channel enhancement-mode FET with a wide range of applications and working principles.

Applications

The SUP90N04-3M3P-GE3 is commonly used in power supply circuits, as it is able to handle relatively high current load. Due to its low on-resistance, it can be used for fast switching and switching noise suppression, making it ideal for high-frequency applications. Moreover, its low temperature dependence makes it suitable for automotive applications operating in extreme temperature conditions without the risk of excessive power loss. Additionally, due to its voltage-controlled operation, it can be used in circuits such as analog switches, cross-over feedback applications, choppers, sample-and-hold circuits, and so on.

Working Principle

In spite of the low turn-on voltage, the wide drain current capability of the SUP90N04-3M3P-GE3 makes it a perfect choice for high-power applications. As an enhancement-mode FET, it operates as an open circuit with the gate completely off, until the gate is driven above its threshold voltage, at which point it conducts current from the source to the drain, allowing current flow to take place. Subsequent changes in gate voltage result in corresponding changes in channel conductance and hence changes in drain current. This makes it possible to easily control the drain current and thus the power it is capable of dissipating.

In terms of noise suppression, the on-resistance of the SUP90N04-3M3P-GE3 is extremely low, meaning that it has excellent switching characteristics and can efficiently suppress noise by minimizing the local current rise time. Its extremely high breakdown voltage as well as its integrated back-gate protection ensure that the drain current demands remain within safe levels and do not increase beyond a certain point, thus making the FET highly reliable and able to handle the most demanding power supply applications.

Overall, the SUP90N04-3M3P-GE3 is one of the most popular and widely-used single-gate FETs, thanks to its high performance, low cost, and wide range of applications. Its reliable operation, wide drain-current capabilities, and noise suppression make it a perfect tool for high-power and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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