SUP90P06-09L-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SUP90P06-09L-E3 is a 30-V, 9.3-A, 0.49-ohm, P-channel MOSFET that is often used in high-current, low-gate-charge switching applications. It is designed to provide higher power efficiency, higher reliability, and faster switching speeds than many of the alternative devices on the market. It can be used in a variety of applications, including industrial power supplies, automotive power systems, and consumer electronic devices.

The SUP90P06-09L-E3 is designed to be able to quickly and efficiently switch between two or more electrical states, allowing it to be used in various switching and logic circuits. It is constructed using the latest MOSFET technology, allowing for high operating temperature ranges and reduced power losses, making it ideal for use in high-current applications.

The SUP90P06-09L-E3 is composed of an N-type metal oxide semiconductor field effect transistor (MOSFET). A MOSFET acts as an insulated-gate field-effect transistor. Its main components consist of the gate and drain. The gate is made up of a series of metal electrodes that form the control element of the MOSFET. The gate is used to control the flow of electrical current between the source and drain. The drain is the contact that allows current to flow and can be used to generate signals.

The operation of a MOSFET involves three different states: off, strong, and ohmic. In the off state, no current is allowed to pass through the MOSFET. In the strong state, current is allowed to flow, and the voltage between the source and drain is controlled by the gate voltage. In the ohmic state, the gate voltage no longer controls the voltage between the source and drain, and the current is determined only by the resistance of the MOSFET.

When an input voltage is applied to the gate of the MOSFET, a current is induced in the channel between the source and the drain. This current is called the channel current. The channel current is dependent on gate voltage, channel length, channel width, substrate doping, and dielectric constant. The channel current is used to control the flow of current between the source and drain.

The SUP90P06-09L-E3 is designed to be suitable for a variety of high-current, low-gate-charge applications. It has an excellent maximum equivalent on resistance and exceptionally low gate-charge characteristics. It can be used in high-current switching applications and to control the current between two electrical states. It can also be used in logic circuits that require high-speed switching and low-power operation. It is also ideal for use in automotive and industrial power supplies.

The SUP90P06-09L-E3 is a powerful, efficient MOSFET that is well suited for high-current applications. It offers high operating temperature ranges and reduced power losses. It is suitable for use in a variety of applications, including automotive and industrial power supplies, as well as consumer electronic devices. Its low gate-charge characteristics make it ideal for high-speed switching applications, allowing it to provide high power efficiency and reliability.

The specific data is subject to PDF, and the above content is for reference