SUP90N06-6M0P-E3

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The SUP90N06-6M0P-E3 is a part of a family of single N-channel enhancement mode power MOSFETs. It is a type of metal-oxide-semiconductor field-effect transistor (MOSFET), which is essentially an insulated-gate field effect transistor used to control the flow of electrical current in electronic circuits. The SUP90N06-6M0P-E3 has been designed specifically for applications requiring optimized on-state resistance (RDS(on)) and low gate charge (Qg), both of which make it suitable for a wide range of high efficiency, low power switching applications such as synchronous rectification, DC-DC converters and general high-efficiency power switching.

This device\'s small package size and fast switching capabilities make it ideal for a variety of consumer electronics products such as laptops, smartphones and tablets, as well as industrial equipment that utilizes power supply solutions for medical equipment, smart metering and consumer products. Its main applications include synchronous rectification, DC-DC converters, load and line switching, DC-AC inverters, lighting ballasts and motor drives.

The SUP90N06-6M0P-E3 has a wide operating temperature range of -55°C to +150°C, which makes it a suitable choice for high temperature applications. Its maximum drain-source on-state resistance of 0.6 ohms contributes to its low power loss and optimized conduction losses. Furthermore, its integrated bootstrap diode eliminates the need for an extra diode, thereby freeing up valuable PCB space. For applications requiring an extended drain-source voltage (VDS(max)) and maximum drain current (ID(max)) range, this device is capable of withstanding up to 90V and 30A respectively.

Working principle

The SUP90N06-6M0P-E3 is a three-terminal, enhancement-mode MOSFET, which was designed for low power applications. It operates by using a gate-controlled depletion mode, in which the current is only let though when a threshold voltage (VGS(th)) is attained at the gate. When the voltage applied to the gate is below the threshold voltage, current will not be passed. However, when a voltage higher than the thershold voltage is applied to the gate, the current will be increased and passed through the drain and source terminals. This is known as the enhancement mode, and is used in power MOSFETs to reduce power losses and minimize heat generation.

The SUP90N06-6M0P-E3 has a gate-controlled and gate-sourced MOSFET structure, which allows the device to handle high current applications. When the gate current is removed, the MOSFET’s body diode is also shut off, and the device’s output impedance is minimized. Furthermore, the design of the SUP90N06-6M0P-E3 has been optimized for low on-state resistance and low gate charge, making it suitable for high efficiency, low power switching applications.

In conclusion, the SUP90N06-6M0P-E3 is an efficient, small-sized power MOSFET specially designed for low power applications such as synchronous rectification and DC-DC converters. Its integrated bootstrap diode eliminates the need for an extra diode, and its wide operating temperature range enables it to be used in a wide range of high temperature applications. Furthermore, its optimized on-state resistance (RDS(on)) and low gate charge (Qg) make it suitable for a wide range of high efficiency, low power switching.

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