SUP90142E-GE3 Allicdata Electronics
Allicdata Part #:

SUP90142E-GE3-ND

Manufacturer Part#:

SUP90142E-GE3

Price: $ 2.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 200V 90A TO220AB
More Detail: N-Channel 200V 90A (Tc) 375W (Tc) Through Hole TO-...
DataSheet: SUP90142E-GE3 datasheetSUP90142E-GE3 Datasheet/PDF
Quantity: 240
1 +: $ 2.38140
10 +: $ 2.12814
100 +: $ 1.74516
500 +: $ 1.41314
1000 +: $ 1.19180
Stock 240Can Ship Immediately
$ 2.62
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 31200pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Series: ThunderFET®
Rds On (Max) @ Id, Vgs: 15.2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SUP90142E-GE3 is a voltage-controlled insulated-gate field-effect transistor (IGFET) also known as a MOSFET. MOSFETs are three-terminal devices, with a source, a drain, and a gate, electrically isolated from the substrate by an insulating layer. MOSFETs come in many variations, with the SUP90142E-GE3 being a particular type of single-distributed-gate field-effect transistor. It is commonly used in switching and amplification applications.

The source and drain of the SUP90142E-GE3 are connected to two external reference voltages, a positive voltage at the source and a negative voltage at the drain. When the gate is brought to a higher potential, it creates an electric field that allows current to flow between the source and drain. This is known as turning on the transistor. An insulator layer between the gate and the substrate keeps the circuit isolated.

In order to control the behavior of the SUP90142E-GE3, the voltage applied to the gate must be increased or decreased. When the gate voltage is increased, the electric field between the source and drain increases and more current will flow. When the gate voltage is decreased, the electric field between the source and drain decreases and less current will flow. This is the principle by which voltage-controlled transistors, such as the SUP90142E-GE3, operate.

The SUP90142E-GE3 is primarily used in switching and amplification applications. A common application of MOSFETs is as a switch, where they are used to turn circuits on and off by controlling the flow of current. For example, they can be used as power switches in electrical appliances, or even as simple on-off switches in digital circuits.

MOSFETs are also used in amplifier circuits, where they are used to amplify the input signal to a higher voltage. A typical amplifier circuit consists of a MOSFET, a bias resistor connected to the gate, and a load resistor connected between the source and drain. When an input signal is applied to the gate, it increases the electric field between the source and drain, allowing more current to flow. This current flows through the load resistor, increasing the voltage across it. This increase in voltage is what is known as the amplified output.

In addition to switching and amplification applications, the SUP90142E-GE3 can also be used as a linear amplifier or oscillator. In linear amplifier applications, the transistor is used to amplify an input signal without distorting the waveform. It can also be used as an oscillator, where the transistor is used to generate a repeating signal of a desired frequency.

The SUP90142E-GE3 is a versatile device with many applications. It is commonly used in switching and amplification applications, but can also be used as a linear amplifier or oscillator. By applying a controlled voltage to the gate, current can be controlled between the source and drain, allowing the MOSFET to be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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