Allicdata Part #: | SUP90N08-7M7P-E3-ND |
Manufacturer Part#: |
SUP90N08-7M7P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 75V 90A TO220AB |
More Detail: | N-Channel 75V 90A (Tc) 3.75W (Ta), 208.3W (Tc) Thr... |
DataSheet: | SUP90N08-7M7P-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 208.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4250pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SUP90N08-7M7P-E3 is a high-power MOSFET designed for high efficiency power switching in circuit board applications. It is a single N-channel enhancement-mode MOSFET, which means that it is normally off and needs electrical control to turn it on.
Application Field
The SUP90N08-7M7P-E3 is typically used in high power applications including audio amplifiers, motor and actuator control, battery management systems, solar inverters, and high voltage power supplies. Given its high power handling capability and low resistance, the device can be used in a variety of power libraries. It is also designed for high power radio frequency (Rf) amplifiers and Variable speed drives (VSD).
Working Principle
MOSFETs control the flow of current by controlling the voltage source and are divided into two categories – enhancement mode and depletion mode. The SUP90N08-7M7P-E3 MOSFET is an enhancement-mode device. This means that it is normally off and requires an electrical control signal to turn it on today. When a positive voltage is applied to the gate, the MOSFET starts to conduct electricity by creating an electric field at the gate, which attracts charge carriers such as holes and electrons across the channel region.
The width of the channel and the depth of the channel are both adjustable. Increasing the gate voltage increases the width of the channel, allowing for higher current flow and greater device control, thus making the MOSFET excellent for single-ended or push-pull amplifier designs. The SUP90N08-7M7P-E3 supports high power capability and low device resistance, making it a suitable choice for high-power applications.
The current-limiting ability of MOSFETs is also adjustable. This can be controlled using the body diode, which allows current to flow in the reverse direction when the gate voltage turns off. By adjusting the body diode parameters, the body diode can limit the current flow, enabling the protection of power transistors from short-circuit events.
The SUP90N08-7M7P-E3 MOSFET combines high power capability, low resistance, current limiting and adjustable voltage control with ease of integration. It can be used in power circuits to control switching applications such as motor control, audio amplifiers, variable speed drives and solar inverters, while providing a high degree of reliability and power efficiency.
The specific data is subject to PDF, and the above content is for reference
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