| Allicdata Part #: | SUP90330E-GE3-ND |
| Manufacturer Part#: |
SUP90330E-GE3 |
| Price: | $ 1.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 200V 35.8A TO220AB |
| More Detail: | N-Channel 200V 35.8A (Tc) 125W (Tc) Through Hole T... |
| DataSheet: |  SUP90330E-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.22220 |
| 10 +: | $ 1.08234 |
| 100 +: | $ 0.85554 |
| 500 +: | $ 0.66350 |
| 1000 +: | $ 0.52381 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1172pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Series: | ThunderFET® |
| Rds On (Max) @ Id, Vgs: | 37.5 mOhm @ 12.2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35.8A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SUP90330E-GE3 is an N-Channel MOSFET that is ideal for use in a wide variety of applications. Its design makes it an excellent choice for automotive, industrial and telecoms applications. This device is able to provide low on-resistance, improved low gate charge, and improved switching performance compared with earlier models. The SUP90330E-GE3 also offers higher slew rate and faster switching times than older MOSFETs.
The SUP90330E-GE3 is a N-Channel enhancement mode MOSFET. It uses a single external gate for control purposes. The gate is connected to a Vgs voltage, which is used to control the flow of current through the channel between the drain and source. When Vgs is greater than the threshold voltage of the MOSFET, the channel opens up allowing current to flow. As the gate voltage is increased above the threshold voltage, the current passing through the channel increases. The drain-source on-resistance of the device is remarkably low making it ideal for use in high current applications.
The SUP90330E-GE3 is a high voltage MOSFET which is capable of operating at a maximum Vds of 30V. This makes it suitable for a wide range of automotive, industrial and telecoms applications. With a drain-source voltage of 30V, this device is able to carry a maximum current of 59A, which is well suited for high power applications. Due to its low gate charge, the SUP90330E-GE3 is also an especially good choice for applications which require higher switching frequencies.
In general, the SUP90330E-GE3 is a versatile MOSFET, which can be used in a variety of applications. It has low on-resistance, improved low gate charge and improved switching performance when compared to older models. Its high-voltage and high-current capabilities make it an ideal choice for automotive, industrial, and telecoms applications. The low gate-charge of the device makes it especially well-suited for applications which require higher switching frequencies. Its design and features make it a perfect choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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