SUP90N06-5M0P-E3 Allicdata Electronics
Allicdata Part #:

SUP90N06-5M0P-E3-ND

Manufacturer Part#:

SUP90N06-5M0P-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 90A TO220AB
More Detail: N-Channel 60V 90A (Tc) 3.75W (Ta), 300W (Tc) Throu...
DataSheet: SUP90N06-5M0P-E3 datasheetSUP90N06-5M0P-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Strip
Description

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The SUP90N06-5M0P-E3 is a type of field effect transistor (FET), more specifically a single-channel, Enhancement-mode MOSFET. A FET is a type of transistor in which a voltage applied to a gate is used to control the conduction of current through the source and drain. It is similar to a normal transistor, but the operation is slightly different and with a few basic modifications the FET can be used in a wide variety of applications.

This type of FET is designed for low-power and low-voltage operations. It has particularly low on-state resistance and high switching speeds as compared to traditional transistors. Additionally, it has a low threshold voltage, making it extremely versatile and able to operate in many different scenarios. As a result, this makes the SUP90N06-5M0P-E3 ideal for a range of low-power applications, particularly as a replacement for older, higher-voltage transistors.

The working principle of the SUP90N06-5M0P-E3 is relatively simple. When a voltage is applied to the gate, a small current is passed through the body of the MOSFET, which then turns the FET on. When the voltage is removed, the FET turns off. The voltage applied to the gate determines how much current will flow, and allows the user to control the amount of current that is flowing through the MOSFET.

When on, the SUP90N06-5M0P-E3 behaves like an ordinary transistor. Current flows from the drain to the source and is controlled by the voltage applied to the gate. It is possible to increase or decrease the current by adjusting the gate voltage, allowing the user to control the amount of current flowing through the FET.

The SUP90N06-5M0P-E3 has a wide range of applications. It is particularly suitable for use in low-power, low-voltage circuits, as it has a low on-state resistance and a low threshold voltage. Additionally, it has high switching speeds, making it ideal for use in applications where speed is important. It can be used as a switch, an amplifier or even as an actuating device in certain applications. It is also commonly used as a replacement for old, higher-voltage transistors.

In summary, the SUP90N06-5M0P-E3 is a type of Enhancement-mode single-channel MOSFET. It has particularly low on-state resistance, high switching speeds and a low threshold voltage. It is particularly suitable for low-power, low-voltage applications, such as a switch, an amplifier or even as an actuating device. Additionally, it can also be used as a replacement for higher-voltage transistors.

The specific data is subject to PDF, and the above content is for reference

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