TC58NVG2S0HBAI6

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND (SLC)
Memory Size:	4Gb (512M x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	67-VFBGA
Supplier Device Package:	67-VFBGA (6.5x8)

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Memory Application Field and Working Principle: TC58NVG2S0HBAI6
Memory applications, or memory-based computing, are ubiquitous in computing and electronic systems. Memory applications are used in a variety of industries, from energy and healthcare to gaming and telecommunications. Memory applications provide a range of benefits and applications, so understanding their workings and capabilities can be an invaluable asset. The TC58NVG2S0HBAI6 is one type of memory device used in memory applications. Knowing how it works and what it can be used for will better equip an individual to make informed decisions regarding these applications.The TC58NVG2S0HBAI6 is a Non-Volatile Memory (NVM) device created by Toshiba. It is a small, low-power, and optimized embedded device that incorporates a single 4Gb NAND flash memory architecture along with a controller to simplify programming and data transfer. The memory device offers NAND flash cell operation at a minimum read access time of 50μs and 21IOPS, which make it suitable for use across many applications. It is also capable of performing as a stand-alone storage device or as a reloadable boot device for embedded systems.The TC58NVG2S0HBAI6 has widespread application in memory-based computing and electronic systems. It is often used in gaming consoles to store and access large amounts of data. These gaming systems can require up to sixty-four gigabytes of storage to store game files, levels, and settings. The memory device can also be used in a range of other electronic applications, such as home theater systems, automotive systems, and home automation systems. Embedded systems, such as industrial robots and medical equipment, can also use the device, as they typically require a large amount of data exchange and storage. The TC58NVG2S0HBAI6 is also used in medical imaging systems to store vital patient data, such as medical images and patient outcome information.In addition to its use in memory applications, the TC58NVG2S0HBAI6 has a number of other benefits due to its reliable, high capacity, and low power requirements. The device is able to withstand adverse environmental conditions, such as shock and vibration that makes it suitable for use in portable devices and for long-term storage in harsh conditions. It also features a built-in error correction and data management system, making it ideal for use in delicate and sensitive applications.The working principle of a TC58NVG2S0HBAI6 is relatively simple. The device is composed of transistors, logic gates, and memory cells. The memory cells, which are connected in an array, are programmed and erased by the application of an appropriate voltage. When it is powered up, the device enters a write or read mode. A write operation is initiated by applying a write polarity voltage to the cells and applying data to the memory cells by voltage or through a sensing circuit. When reading, the device applies the read voltage to the memory cells and outputs a current that is proportional to the stored data. The data is then decoded and transmitted to the output by the device.The TC58NVG2S0HBAI6 is becoming increasingly popular for use in a range of memory-based applications due to its reliability, performance, and power efficiency. Its range of applications in gaming, automotive, home automation, and medical imaging systems make it an advantageous choice. Not only is it capable of withstanding extreme environmental conditions, but it also has a built-in error correction and data manage system, making it suitable for sensitive applications. Understanding the workings and structure of the device will enable individuals to make the most of its capabilities.

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