TC58NVG1S3ETAI0 Allicdata Electronics
Allicdata Part #:

TC58NVG1S3ETAI0-ND

Manufacturer Part#:

TC58NVG1S3ETAI0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Toshiba Memory America, Inc.
Short Description: IC FLASH 2G PARALLEL 48TSOP I
More Detail: FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parall...
DataSheet: TC58NVG1S3ETAI0 datasheetTC58NVG1S3ETAI0 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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The TC58NVG1S3ETAIO is a type of memory used in a variety of devices, in particular mobile and computing devices. It is reliable, efficient, high-capacity, and is highly versatile in its applications. In this article we discuss the application field and working principle of the TC58NVG1S3ETAIO.

Application Field: The TC58NVG1S3ETAIO can be used in a variety of applications and devices, such as personal computers, tablets, smartphones, and digital cameras. It is also often used in industrial equipment, medical instruments, and electronic guitars. The TC58NVG1S3ETAIO has an especially large capacity, which makes it ideal for large projects such as file storage and multitasking. In addition, its ability to handle large amounts of data makes it highly suitable for enterprise applications, including backup and recovery, database management, and analytics.

Working Principle: The working principle of the TC58NVG1S3ETAIO is to store data in the form of electrons on a non-volatile memory (NVM). It functions in a similar way to a regular random-access memory (RAM), but its data is not lost when power is switched off. Data is stored on the NVM in its cells, and can be accessed automatically once the device is powered on. Each cell contains up to 4 bits of data, allowing the device to store 4 times as much data as a regular RAM. This ensures that it is able to store more data than a normal RAM, while still maintaining a fast read and write speed.

The TC58NVG1S3ETAIO makes use of 3D Flash technology to increase the capacity of the memory. This technology stacks multiple layers of transistors on top of one another, increasing the storage capacity and speed. This makes the device highly reliable and efficient, as it is able to quickly find, store, and retrieve data. In addition, the TC58NVG1S3ETAIO is fully compatible with the most popular operating systems, making it an ideal choice for enterprise and consumer applications.

In conclusion, the TC58NVG1S3ETAIO is a reliable and efficient memory solution for a variety of different applications. It offers high capacity, fast access speeds and is compatible with most popular operating systems. The 3D flash technology employed in the TC58NVG1S3ETAIO also makes it one of the most advanced memory solutions on the market.

The specific data is subject to PDF, and the above content is for reference

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