
Allicdata Part #: | TC58CVG2S0HRAIG-ND |
Manufacturer Part#: |
TC58CVG2S0HRAIG |
Price: | $ 5.08 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Toshiba Memory America, Inc. |
Short Description: | IC FLASH 4G SPI 104MHZ 8WSON |
More Detail: | FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) SPI - ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 4.62420 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND (SLC) |
Memory Size: | 4Gb (512M x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | -- |
Access Time: | 280µs |
Memory Interface: | SPI - Quad I/O |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | 8-WSON (6x8) |
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Memory is an important part of computer systems and applications. TC58CVG2S0HRAIG is one of the leading memory devices used in today’s computers. The device is made up of a double-layer assembly of a capacitive voltage generator and an integrated Single-Ended Input/Output logic. It is designed for multiple applications and is able to store a large number of logic states without the need for additional external components.
TC58CVG2S0HRAIG\'s main application lies in DRAM, SRAM and Flash memories. The device has the ability to generate a high-performance logic state simulator for data processing, making it ideal for use in multi-layer memories such as large-scale integrated circuit (LSI) memories. In LSI memories, TC58CVG2S0HRAIGs are the main device responsible for providing the memory access necessary to maintain data integrity and performance. The device is also used in system-on-chip (SoC) solutions where it is required to perform memory access in order to provide support for multiple applications.
In addition to its use in memory applications, TC58CVG2S0HRAIGs are also widely used in power management, system-level design, and industrial control solutions. It is widely used in industrial automation and the development of controllers, embedded microcontroller systems, nano-electronic systems, and other high-performance microprocessors. The device has the capacity to provide a wide range of input/output (I/O) services and data processing capabilities, making it suitable for a variety of applications.
TC58CVG2S0HRAIG\'s main working principle is based on the capacitance-voltage generator process. It works by generating a stable and high-speed output, which is proportional to the input voltage. This voltage is passed through a series of open/close switches, which control the ability of the device to store and recall data. The system is also capable of recognizing and responding to external signals, making it suitable for a wide range of applications including industrial control, power management and system-level design.
TC58CVG2S0HRAIG is a device used in multiple applications and is capable of providing high performance and stability. The device can be used in DRAM, SRAM and Flash memories and can be used in a wide range of applications. It is based on a capacitance-voltage generator and is capable of responding to external signals. The technology is used in a wide range of applications such as industrial control, power management and system-level design, making it suitable for a variety of applications.
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TC58NVG2S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58BVG0S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
TC58BVG2S0HBAI4 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 63TF... |
TC58BYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
TC58NVG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
TC58NVG2S0HBAI6 | Toshiba Memo... | -- | 37 | IC FLASH 4G PARALLEL 67VF... |
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TC58 | Cornell Dubi... | 0.0 $ | 1000 | CAP ALUM 40UF 250V AXIAL4... |
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TC58NVG1S3ETAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58BVG1S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 67VF... |
TC58BYG2S0HBAI6 | Toshiba Memo... | 3.56 $ | 191 | IC FLASH 4G PARALLEL 67VF... |
TC58CVG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
TC58BVG0S3HBAI6 | Toshiba Memo... | -- | 14 | IC FLASH 1G PARALLEL 67VF... |
TC58CVG0S3HRAIG | Toshiba Memo... | -- | 1000 | IC FLASH 1G SPI 104MHZ 8W... |
TC58NVG3S0FTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 8G PARALLEL 48TS... |
TC58BVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NVG1S3ETA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NYG0S3HBAI6 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 67VF... |
TC58NVG1S3HBAI4 | Toshiba Memo... | -- | 26 | IC FLASH 2G PARALLEL 63TF... |
TC58NVG2S0HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58NVG1S3HTA00 | Toshiba Memo... | -- | 1000 | IC FLASH 2G PARALLEL 48TS... |
TC58NVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
TC58BVG2S0HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 4G PARALLEL 48TS... |
TC58NYG1S3HBAI6 | Toshiba Memo... | -- | 459 | IC FLASH 2G PARALLEL 67VF... |
TC58CYG0S3HQAIE | Toshiba Memo... | 0.0 $ | 1000 | IC FLASH 1G SPI 104MHZ 16... |
TC58BVG0S3HTAI0 | Toshiba Memo... | -- | 1000 | IC FLASH 1G PARALLEL 48TS... |
TC58CVG2S0HRAIG | Toshiba Memo... | 5.08 $ | 1000 | IC FLASH 4G SPI 104MHZ 8W... |
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