| Allicdata Part #: | TPC8207DKR-ND |
| Manufacturer Part#: |
TPC8207(TE12L) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET 2N-CH 20V 6A 8-SOP |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 6A 450mW Surfa... |
| DataSheet: | TPC8207(TE12L) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 200µA |
| Base Part Number: | TPC*207 |
| Supplier Device Package: | 8-SOP (5.5x6.0) |
| Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power - Max: | 450mW |
| Input Capacitance (Ciss) (Max) @ Vds: | 2010pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 4.8A, 4V |
| Current - Continuous Drain (Id) @ 25°C: | 6A |
| Drain to Source Voltage (Vdss): | 20V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Digi-Reel® |
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TPC8207(TE12L) is a type of Transistor - Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) - Arrays. It is one of the most widely used types of FETs due to its excellent power capability. It is mainly used in power control applications and has the ability to switch high voltages and currents. This makes it an ideal device for switching power switching applications such as motor control, AC phase control, and load control.
The TPC8207(TE12L) device is comprised of twelve N-channel MOSFETs in an inhibitor/driver configuration. The MOSFETs are “arrayed” in three columns across four rows in a “6or12L” package. It is a type of switching array that has the ability to switch high voltages and current while providing excellent static state channel blocking. It is important to note that although the device can be operated at high voltages, the power dissipation should not exceed specified limits.
The device is typically used in applications where several high current loads can be individually controlled by a single signal source. Due to the arrayed configuration, each of the MOSFETs can be individually addressed to control multiple high current loads separately, allowing the device to be easily used for applications such as AC phase control, motor control, and load control. In addition, the device’s static state blocking capabilities make it ideal for applications where several large loads are required to be addressed simultaneously.
The working principle behind the TPC8207(TE12L) is relatively simple. Each of the twelve MOSFETs has three pins: the drain pin, the gate pin, and the source pin. The drain pin is used to connect the device to the load, the gate pin is used to control the flow of the current, and the source pin is used to provide the desired voltage. When a positive voltage is applied to the gate pin, the MOSFET will conduct and allow current to flow between the drain and source pins. When the voltage applied to the gate pin is reduced, the MOSFET will “turn off” and block the current. By controlling the voltage applied to the gate pin, the device can be used to control the amount of current allowed to flow through each of the twelve MOSFETs independently.
In conclusion, the TPC8207(TE12L) is an ideal device for applications such as power control, motor control, AC phase control, and load control. It is comprised of twelve N-channel MOSFETs in an inhibitor/driver configuration and is capable of controlling large amounts of current with just a single signal source. Its static state blocking capabilities make it a great choice for applications that require several large loads to be addressed simultaneously. The working principle of the device is straightforward, as it uses the voltage applied to the gate pin to control the current flow of each of the MOSFETs independently.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| TPC8065-H,LQ(S | Toshiba Semi... | 0.34 $ | 1000 | MOSFET N-CH 30V 13A 8SOPN... |
| TPC816MB C9G | Taiwan Semic... | 0.04 $ | 1000 | OPTOISO 5KV TRANS DIP-4MO... |
| TPC8032-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 15A SOP8 ... |
| TPC8038-H(TE12L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A SOP8 ... |
| TPC8126,LQ(CM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A 8SOPP... |
| TPC8042(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 18A 8-SOP... |
| TPC8207(TE12L) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 6A 8-SOP... |
| TPC8113(TE12L,Q) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A SOP8 ... |
| TPC817S1A RAG | Taiwan Semic... | 0.06 $ | 4000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8407,LQ(S | Toshiba Semi... | 0.39 $ | 1000 | MOSFET N/P-CH 30V 9A/7.4A... |
| TPC8031-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A SOP8 ... |
| TPC8.2AHM3/86A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 7.02V 12.1V TO2... |
| TPC8A06-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A 8SOPN... |
| TPC817MB C9G | Taiwan Semic... | 0.35 $ | 28611 | OPTOISO 5KV TRANS DIP-4MO... |
| TPC8021-H(TE12LQ,M | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 11A SOP8 ... |
| TPC817S1B RAG | Taiwan Semic... | -- | 6000 | OPTOISO 5KV TRANS 4SOPOpt... |
| TPC8111(TE12L,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 11A SOP8 ... |
| TPC817B C9G | Taiwan Semic... | -- | 25679 | OPTOISO 5KV TRANS 4DIPOpt... |
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| TPC8018-H(TE12LQM) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 18A SOP8 ... |
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| TPC817MC C9G | Taiwan Semic... | 0.35 $ | 29021 | OPTOISO 5KV TRANS DIP-4MO... |
| TPC817A C9G | Taiwan Semic... | 0.33 $ | 23223 | OPTOISO 5KV TRANS 4DIPOpt... |
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TPC8207(TE12L) Datasheet/PDF