Allicdata Part #: | TPC8125LQ(S-ND |
Manufacturer Part#: |
TPC8125,LQ(S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 30V 10A 8SOP |
More Detail: | P-Channel 30V 10A (Ta) 1W (Ta) Surface Mount 8-SOP |
DataSheet: | TPC8125,LQ(S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 500µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2580pF @ 10V |
Vgs (Max): | +20V, -25V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | U-MOSVI |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TPC8125,LQ is a N-Channel enhancement mode field effect transistor (FET) that is classified as a single transistor with a low drain-source on-state resistance. Developed and manufactured by STMicroelectronics, this FET is a DMOS with a maximum drain current rating of up to 8.5 A and a maximum drain-source voltage rating of up to 100 V. It has an average gate-source voltage of -8 V to -12 V, and a maximum gate threshold voltage of 4 V.
This transistor provides direct current (DC) control of the flow of electron current. FET transistors are voltage-controlled devices, and MOSFETs are the most popular form of transistor used today. The MOSFET is comprised of two elements, the gate terminal and the source terminal, with a drain terminal in between. The majority of the current flows through the drain terminal and is controlled by the gate terminal which is connected to an electrical voltage source. When a positive voltage is applied to the gate terminal, the MOSFET is “switched on” and the drain is allowed to conduct and control the current flow.
The TPC8125,LQ can be used for a variety of applications, and is especially well-suited for incorporation into audio amplifiers and class D power amplifiers. It is also an excellent choice for LED driver, DC motor driver and general power switch applications. Furthermore, it is a great choice for switching mode power supply (SMPS) applications that require high switching frequencies. Due to its low power consumption, the TPC8125,LQ is also well-suited for low voltage and portable electronics.
The TPC8125,LQ is suitable for working with DC voltage and current levels. Its low output resistance ensures a low quiescent current level, resulting in high power efficiency. Furthermore, the TPC8125,LQ features low gate charge and switching times, making it an excellent choice for fast-switching power supplies. It is also highly reliable, and has a UL94V-0 flame-retardant package rating to ensure safety when used in high-voltage applications.
In summary, the TPC8125,LQ is a reliable N-Channel enhancement mode FET transistor developed and manufactured by STMicroelectronics. This highly efficient transistor is make-up of two terminals, the source and gate, and can be used for a variety of applications. The TPC8125,LQ is well-suited for audio amplifiers, class D amplifiers, LED drivers, motor drivers and SMPS applications due to its low resistance, low power consumption and fast switching times. This device is highly reliable and also features a UL94V-0 flame-retardant package rating to ensure safety in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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