TPC8092,LQ(S Allicdata Electronics
Allicdata Part #:

TPC8092LQ(S-ND

Manufacturer Part#:

TPC8092,LQ(S

Price: $ 0.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 15A 8SOP
More Detail: N-Channel 30V 15A (Ta) 1W (Ta) Surface Mount 8-SOP
DataSheet: TPC8092,LQ(S datasheetTPC8092,LQ(S Datasheet/PDF
Quantity: 991
2500 +: $ 0.23574
Stock 991Can Ship Immediately
$ 0.26
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: U-MOSVII
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TPC8092 LQ is a single N-channel enhancement-mode power MOSFET. It is a high voltage power transistor developed by Toshiba Semiconductor and is in a TO-220 package. The maximum drain-source voltage of the part is 600V with a maximum drain current up to 13A. It is designed to be used in power supplies, DC-DC converters, motor drivers and DC lighting control circuits.

The TPC8092 has a drain-source voltage of 600V which is higher than most MOSFETs in its class. It is also capable of handling relatively large currents of up to 13A which makes it suitable for high-power applications. The switching speed of the MOSFET is good as it can handle frequencies up to 50K Hz which makes it suitable for high frequency circuits.

The working principle behind MOSFETs is based on the flow of electrons across a conducting channel. A gate voltage is applied to the MOSFET across the gate which causes charges to be attracted to the gate surface in the channel. This causes a depletion region in the channel region effectively reducing the amount of current that can flow across it. By varying the gate voltage, the depletion region can be reduced allowing more current to flow across the channel.

The TPC8092 LQ is designed to be used in a wide range of applications. It can be used in electric vehicles as a main switch or in power supplies as a main switching device. It can also be used in AC/DC converters and in motor controllers such as servo motors. The MOSFET is also capable of switching frequencies up to 50K Hz which makes it suitable for high frequency circuits.

In summary, the TPC8092 LQ is a single N-channel enhancement-mode power MOSFET from the Toshiba Semiconductor. It has a maximum drain-source voltage of 600V and a maximum drain current of 13A. It is designed to be used in a wide range of applications including electric vehicles, power supplies, DC-DC converters, motor drivers and DC lighting control circuits. The MOSFET is also capable of switching frequencies up to 50K Hz which makes it suitable for high frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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