| Allicdata Part #: | TPC8092LQ(S-ND |
| Manufacturer Part#: |
TPC8092,LQ(S |
| Price: | $ 0.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 30V 15A 8SOP |
| More Detail: | N-Channel 30V 15A (Ta) 1W (Ta) Surface Mount 8-SOP |
| DataSheet: | TPC8092,LQ(S Datasheet/PDF |
| Quantity: | 991 |
| 2500 +: | $ 0.23574 |
| Vgs(th) (Max) @ Id: | 2.3V @ 200µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | U-MOSVII |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 7.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The TPC8092 LQ is a single N-channel enhancement-mode power MOSFET. It is a high voltage power transistor developed by Toshiba Semiconductor and is in a TO-220 package. The maximum drain-source voltage of the part is 600V with a maximum drain current up to 13A. It is designed to be used in power supplies, DC-DC converters, motor drivers and DC lighting control circuits.
The TPC8092 has a drain-source voltage of 600V which is higher than most MOSFETs in its class. It is also capable of handling relatively large currents of up to 13A which makes it suitable for high-power applications. The switching speed of the MOSFET is good as it can handle frequencies up to 50K Hz which makes it suitable for high frequency circuits.
The working principle behind MOSFETs is based on the flow of electrons across a conducting channel. A gate voltage is applied to the MOSFET across the gate which causes charges to be attracted to the gate surface in the channel. This causes a depletion region in the channel region effectively reducing the amount of current that can flow across it. By varying the gate voltage, the depletion region can be reduced allowing more current to flow across the channel.
The TPC8092 LQ is designed to be used in a wide range of applications. It can be used in electric vehicles as a main switch or in power supplies as a main switching device. It can also be used in AC/DC converters and in motor controllers such as servo motors. The MOSFET is also capable of switching frequencies up to 50K Hz which makes it suitable for high frequency circuits.
In summary, the TPC8092 LQ is a single N-channel enhancement-mode power MOSFET from the Toshiba Semiconductor. It has a maximum drain-source voltage of 600V and a maximum drain current of 13A. It is designed to be used in a wide range of applications including electric vehicles, power supplies, DC-DC converters, motor drivers and DC lighting control circuits. The MOSFET is also capable of switching frequencies up to 50K Hz which makes it suitable for high frequency circuits.
The specific data is subject to PDF, and the above content is for reference
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TPC8092,LQ(S Datasheet/PDF