Allicdata Part #: | TPC8111(TE12L,Q,M)-ND |
Manufacturer Part#: |
TPC8111(TE12L,Q,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 30V 11A SOP8 2-6J1B |
More Detail: | P-Channel 30V 11A (Ta) 1W (Ta) Surface Mount 8-SOP... |
DataSheet: | TPC8111(TE12L,Q,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP (5.5x6.0) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5710pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The TPC8111(TE12L,Q,M) is a part of transistors and FETs (field effect transistors), MOSFETs (metal-oxide semiconductor field effect transistors) – single. It is an enhancement mode NexFET with an internal P-FET, available in a 5x6 DFN3636 package with convenient DCD hybrid technology and a separate leadframe package.
The TPC8111(TE12L,Q,M) is a voltage-controlled device which can be used for power switching applications. It has low on-resistance, fast response times, high power and efficiency, which makes it suitable for DC/DC converters, portable power management, switching power supplies and other high-side and low-side driving applications. Its low operating temperature and built-in protection features make it an ideal solution for extreme environment applications.
The TPC8111(TE12L,Q,M) is designed to provide maximum switching performance and optimize cost-effectiveness. It features a high on-resistance of up to 0.162 Ω, a standard low gate-charge of 5.3 nC, an MSL (Maximally Stable Linearization) of 4.2 V, and a turn on and off times of 5.0 µs and 2.0 µs, respectively. The low operating temperature and extremely low gate-charge make it very efficient in power converters, offering improved accuracy and reliability.
Furthermore, the TPC8111(TE12L,Q,M) has built-in protection features for over-voltage, over-current and over-heating. This device also includes an integrated gate-drive protection circuit to minimize electro-magnetic interference (EMI) from externally generated sources, such as motor power cables, and an adjustable over-current protection circuit. In addition, the device engages an Auto-Crossover to minimize the effects of PAR (High-Side/Low-Side mis-match) and enable soft starting.
The TPC8111(TE12L,Q,M) is also designed to reduce system complexity. It is compatible with different processor types, such as ARM, and is capable of interfacing with different integrated power supplies. This device is lead-free and RoHS compliant, making it a great choice for green applications. It is also compatible with conventional dual N-channel power MOSFETs, eliminating the need for additional components to be used.
In summary, the TPC8111(TE12L,Q,M) is an ideal solution for power switching applications. It offers low operating temperature, fast response times, high on-resistance, built-in protection features and reduces system complexity, making it an excellent choice for applications requiring extreme environment performance, accuracy and reliability. Its lead-free and RoHS compliant features make it even more attractive for green applications.
The specific data is subject to PDF, and the above content is for reference
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