Allicdata Part #: | TPC8031-H(TE12LQM)-ND |
Manufacturer Part#: |
TPC8031-H(TE12LQM) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 11A SOP8 2-6J1B |
More Detail: | N-Channel 30V 11A (Ta) Surface Mount 8-SOP (5.5x6... |
DataSheet: | TPC8031-H(TE12LQM) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP (5.5x6.0) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13.3 mOhm @ 5.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Field Effect Transistors (FETs) are devices that control the motion of electrons through a semiconductor material. The TPC8031-H(TE12LQM) FET, also known as a MOSFET or Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a type of field effect transistor with a metal oxide semiconductor (MOS) gate. It is an especially efficient form of transistor used in a wide range of applications, from small-signal amplifiers to power switching circuits.
The TPC8031-H(TE12LQM) FET is an n-channel MOSFET, the most common type of FET. It is constructed with a p-type substrate, which is the substrate material usually used in FETs, and two n-type channel materials. Electrons enter the device through the gate material and are then collected by the substrate. The voltage applied to the gate is used to control the amount of current that can flow through the device.
The TPC8031-H(TE12LQM) FET is capable of dissipating a wide range of power, from milliwatts for small amplifiers to several kilowatts for power-switching devices. This makes the TPC8031-F(TE12LQM) an ideal choice for a variety of applications, including power converters, gate drivers, power amplifiers, power switches, and pulse generators.
The TPC8031-H(TE12LQM) FET also features a high switching speed and a relatively low gate-source capacitance. This makes it suitable for use in high-frequency circuits and switching applications. In addition, the device can be used in air-conditioning, motor control, and audio systems, among other applications.
The working principle of an FET is relatively simple. When voltage is applied to the gate, it forms an electrostatic field that is used to control the amount of current that can flow through the device. The higher the gate voltage, the more current can flow. The FET can thus be used as a switch, allowing current to flow only when the gate is \'on\' and blocking current when the gate is \'off\'.
The TPC8031-H(TE12LQM) FET is an excellent choice for a variety of applications, thanks to its efficient design and wide power range. It is ideal for use in small-signal amplifiers and power-switching circuits, as well as air-conditioning, motor control, and audio systems. Its high switching speed and low gate-source capacitance further make it a suitable choice for high-frequency and switching applications.
The specific data is subject to PDF, and the above content is for reference
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