TPC8211(TE12L,Q,M) Allicdata Electronics
Allicdata Part #:

TPC8211(TE12L,Q,M)-ND

Manufacturer Part#:

TPC8211(TE12L,Q,M)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET 2N-CH 30V 5.5A SOP8
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 5.5A 450mW Sur...
DataSheet: TPC8211(TE12L,Q,M) datasheetTPC8211(TE12L,Q,M) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Power - Max: 450mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)
Description

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The TPC8211 (TE12L, Q, M) is part of a FET (Field Effect Transistor) family and contains a set of semiconductor devices which are also referred to as MOSFET (Metal Oxide Semiconductor Field Effect Transistor) arrays. This type of transistors provides increased reliability and greater performance compared to traditional bipolar transistors.

A MOSFET is an electronic component with semi-conductive material separating the source terminal from the drain terminal, and an insulator or gate as the medium. It is designed to enable the flow of electrons when given a specific voltage or current. The shift in voltage between the source and the drain causes an electrical field, thus altering the conductive behaviour of the MOSFET.

The TPC8211 (TE12L, Q, M) consists of a metal-oxide semiconductor (MOS) transistor array which contains three MOS transistors, one PMOS (P-channel MOS) and two NMOS (N-channel MOS) transistors. The array also has a low noise input/output stage which provides better performance in comparison to single transistors.

The TPC8211 is designed to be an analog switch which is used to either turn on and off certain circuits or modify the resistance of a circuit. It has a wide range of applications in industrial, automotive and other electronic devices. For example, it can be used to activate or deactivate a fan, regulate the speed of a pump or adjust the temperatures in a refrigerator. This type of transistor is also used in solar cells, televisions and various other types of electronic applications.

The working principle behind the TPC8211 (TE12L, Q, M) is pretty simple. It features an input stage which consists of two transistor gates. These gates are responsible for controlling the current flow between the source and the drain. By adjusting the voltage at the gate, the MOSFET can be switched on and off. This allows the flow of current to be adjusted or completely blocked when necessary.

In order to effectively use the TPC8211, it is helpful to understand its bipolar behavior and how it operates. The transistor is generally thought of as a switch when it comes to its behavior. When the voltage is too low, the transistor is in an open state and the current is not allowed to flow through it. When the voltage increases, the transistor is in a closed state and allows current to flow. By varying the voltage applied at the gate, the on and off state of the transistor can be adjusted.

The TPC8211 is an excellent choice for applications that require a reliable and high performing electronic switch. Its structure allows it to be used in a wide variety of applications and its low noise input/output stage ensures greater performance. Additionally, its bipolar behavior makes it very simple to understand and use. This transistor is a great option for creating reliable and high-performance switching solutions.

The specific data is subject to PDF, and the above content is for reference

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