Allicdata Part #: | TPC8113(TE12L,Q)-ND |
Manufacturer Part#: |
TPC8113(TE12L,Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 30V 11A SOP8 2-6J1B |
More Detail: | P-Channel 30V 11A (Ta) 1W (Ta) Surface Mount 8-SOP... |
DataSheet: | TPC8113(TE12L,Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package: | 8-SOP (5.5x6.0) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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TPC8113 (TE12L,Q), which belongs to transistors - FETs, MOSFETs - Single, is an advanced MOSFET device that is designed to provide superior performance in the most demanding circuit configurations. It is well-matched for power management and protection applications that require high current switching capability, high efficiency, and fast response time. This device can be utilized in a variety of applications in both analog and digital circuits.
The TPC8113 is a unipolar device that incorporates a N-channel MOSFET architecture. It is constructed using highly advanced semiconductor technology, which enables it to achieve its superior performance. The device is extremely power efficient, with a typical on-state resistance of only 0.55ohms and a typical peak output current of 600A.
The TPC8113 consists of an N-channel MOSFET that is connected to two insulated gates. When a positive voltage is applied to the gate, the MOSFET is turned on, which allows electric current to flow through the device. The amount of current flow is directly proportional to the gate voltage. When the voltage applied to the gate reaches a certain threshold, the MOSFET is switched off.
The TPC8113 is designed to provide fault protection and robust power management functions. It can be used to protect circuits from electrical overloads, shorts, over-voltage, and under-voltage conditions. It also provides fast over-current protection, allowing it to be used in high-power applications where protection is critical. Additionally, the TPC8113 provides adjustable over-current and under-voltage limits, allowing the device to be customized to meet the specific needs of the application.
The TPC8113 is an advanced MOSFET with a wide range of applications. It is ideal for controlling the power supply to motors, actuators, and other high-current devices. Because of its advanced features and versatile applications, the device can also be used in power management designs, DC-DC converters, and other power production circuits. The device can operate from 8V to 24V and can handle currents up to 600A, making it suitable for a variety of applications.
The TPC8113 is an excellent choice for embedded power systems and other power applications where high-current switching and protection are needed. Its superb performance, power efficiency, and fast response time make it ideal for a variety of control and protection circuits. With its wide range of features and applications, the TPC8113 is an ideal choice for embedded power systems and power management designs.
The specific data is subject to PDF, and the above content is for reference
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