Allicdata Part #: | TPC8110(TE12L,Q,M)-ND |
Manufacturer Part#: |
TPC8110(TE12L,Q,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 40V 8A SOP8 2-6J1B |
More Detail: | P-Channel 40V 8A (Ta) 1W (Ta) Surface Mount 8-SOP ... |
DataSheet: | TPC8110(TE12L,Q,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | U-MOSIII |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2180pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP (5.5x6.0) |
Package / Case: | 8-SOIC (0.173", 4.40mm Width) |
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The TPC8110 series (TE12L,Q,M) transistor is a valuable addition to the range of power mosfets available to engineers and designers. This family of transistors allows the design and construction of a wide variety of applications that require high current and power density operation. The TPC8110 family offers excellent on-state performance and a wide operating range.
The main application field of TPC8110 series transistors is power switching and power conversion applications. Power electronics require high reliability components able to switch large current levels and withstand high operating temperatures. The TPC8110 series transistors offer excellent current and temperature performance in a very small package.
The TPC8110 is a three-terminal enhancement-mode silicon gate power transistor, meaning that it requires a gate-source bias in order to turn on. The gate is electrically isolated from the source and drain, and for a given area, the transistor has a lower on-resistance than any other device.
The working principle of the TPC8110 can be described via the diagram below. The gate-source voltage is applied to the gate, which is isolated from the source and drain. This gate voltage determines the current that will flow between the source and drain.
When the gate-source voltage reaches a certain threshold, the current between the source and drain will start to increase exponentially. This turn-on characteristic is referred to as ‘avalanche breakdown’, and in the context of mosfets, it is referred to as the ‘transconductance’. The TPC8110 has a very high transconductance relative to other mosfets, making it an ideal choice for applications that require high switching speeds and high current levels.
The drain-source voltage can be referred to as the ‘leakage current’. The TPC8110 series transistors are designed to have a very low leakage current, meaning that it can operate efficiently even in high power applications. The TPC8110 transistors are also low on-resistance devices, meaning that they are ideal for applications that require high current levels and/or large power levels.
Due to its excellent switching speed, current and temperature performance, the TPC8110 is ideal for power switching and power conversion applications. It is particularly well-suited to applications that require high current levels and high power levels, such as motor drives, power supplies, and power conversion. The TPC8110 series offers an excellent combination of performance and cost, making it an ideal choice for engineers and designers who require a reliable and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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