TPC8033-H(TE12LQM)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TPC8033-H(TE12LQM) is a type of field-effect transistor (FET). It is a single n-channel enhancement insulated-gate bipolar transistor (IGBT) with good endurance and a maximum operating temperature of 150°C. It was designed primarily for automotive applications and other conditions where high reliability is essential. The TPC8033-H(TE12LQM) is a technology which allows users to combine the advantages of both bipolar transistor and FET. It features low on-resistance, fast switching speed, high breakdown voltage, routing flexibility, transparent gate condenser, and EMI immunity.

The TPC8033-H(TE12LQM) is considered an ideal choice for automotive applications such as electronic power steering, powertrain control module, fan motor control, lighting applications, motor controllers, alternators, and power supply controllers. The device can also be used in the renewable energy industry, examples include wind turbines and solar inverters.

The TPC8033-H(TE12LQM) operates by employing an insulated-gate bipolar transistor (IGBT) which has a bipolar structure with an n-channel FET inserted between the collector and base. The N-channel FET is the gate of the transistor. When the gate voltage is low, the N-channel is completely off, preventing current from flowing through the transistor and the FET is then said to be in an “off state”. When the gate voltage is increased, the FET is turned on and current can flow through the transistor, thus allowing the transistor to conduct current.

The main advantage of using the TPC8033-H(TE12LQM) is its large current ratings. The device can handle up to 8A of continuous current while still providing excellent EMI immunity, fast switching speed and low on-resistance. Additionally, the transistor has a wide operating temperature range of -40°C to +150°C, allowing it to be used in extreme environmental conditions. The device also features a built-in Gate-Emitter voltage (VGE) of 1500V, making it ideal for use in high power systems.

The TPC8033-H(TE12LQM) is a great choice for automotive applications and other applications requiring good reliability and large current ratings. The device is capable of handling up to 8A of continuous current and has a wide operating temperature range of -40°C to +150°C. Additionally, the transistor also features EMI immunity, fast switching speed, and low on-resistance. The built-in Gate-Emitter voltage of1500V makes it ideal for use in high power systems. Overall, the TPC8033-H(TE12LQM) is an excellent choice for automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference